Abstract-We demonstrated a silicon photonics-wireless interface integrated circuit (IC) realized in 0.25-µm SiGe bipolar complementary metal-oxide-semiconductor technology, which converts 850-nm optical nonreturn-to-zero data into 60-GHz binary phase-shift keying wireless data. A transmission of 1.6 Gb/s in 60 GHz using the interface IC is successfully demonstrated with the error-free operation achieved at 6-dBm optical input power.