600 V JEDEC-qualified highly reliable GaN HEMTs on Si substrates

Kikkawa, T.; Hosoda, Toru; Imanishi, Kenji; Shono, K.; Itabashi, K.; Ogino, Tsutomu; Miyazaki, Y.; Mochizuki, Akitoshi; Kiuchi, K.; Kanamura, Masahito; Kamiyama, Masamichi; Akiyama, Shiniichi; Kawasaki, Susumu; Maeda, Takeshi; Asai, Yasufumi; Wu, Yifeng; Smith, Kendall O.; Gritters, J.; Smith, Peter E.; Chowdhury, S.; Dunn, Dixie; Aguilera, Martin; Swenson, Brian L.; Birkhahn, R.; McCarthy, L.; Shen, Li; McKay, J.; Clement, H.; Honea, Jim; Yea, S.; Thor, Douglas; Lal, R.; Mishra, Umesh K.; Parikh, P.

doi:10.1109/iedm.2014.7046968

Cited by 33 publications

(15 citation statements)

References 2 publications

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“…Therefore the breakdown voltage of the switching device is chosen with a margin concerning the applied voltage to ensure the stable operation. Since the breakdown behaviour of GaN-HEMTs is complex because there are many leakage paths and no avalanche withstanding capability, the present GaN-HEMT products have been designed with large breakdown voltage margin [2]. Although the breakdown characteristics have been studied using the bias stress test and the device simulation in the previous works [3,4], the breakdown voltage design for highly reliable operation has yet to be clarified.…”

Section: Introductionmentioning

confidence: 99%

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Breakdown behaviour of high-voltage GaN-HEMTs

Saito

Suwa

Uchihara

et al. 2015

Microelectronics Reliability

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Section: Introductionmentioning

confidence: 99%

“…Recent demonstrations show that GaN-HEMTs can attain ultra-low on-resistance lower than the Si-limit and mass-production of 600 V-class JEDEC qualified devices has been started [2].…”

Section: Introductionmentioning

confidence: 99%

Breakdown behaviour of high-voltage GaN-HEMTs

Saito

Suwa

Uchihara

et al. 2015

Microelectronics Reliability

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“…High voltage GaN-on-silicon power switches are now a reality, following successful completion of JEDEC qualification [1][2][3][4][5][6][7][8][9][10][11][12] as well as establishment of high voltage MTTF of over 1 x 10 6 hours [13]. A large area (6inch) GaNon-Si heteroepitaxial growth technology and the ability to manufacture in existing high volume Si foundries makes GaN power switches commercially attractive [14,15].…”

Section: Introductionmentioning

confidence: 99%

Commercialization and reliability of 600 V GaN power switches

Kikkawa¹,

Hosoda²,

Shono³

et al. 2015

2015 IEEE International Reliability Physics Symposium

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The reliability of 600 V GaN power switches, fabricated in a silicon CMOS foundry, has been demonstrated. JEDEC qualification of cascode packages and the long term reliability of GaN power switches has been estimated for the first and shown to be greater than a million hours. Excellent switched/dynamic on-resistance up to 1000 V and breakdown voltage over 1500 V indicate the suitability of these devices for switching up to 480 V. Detailed data of high temperature reverse bias (HTRB) test is shown. High temperature DC stress test and high voltage off-state stress tests also corroborate the high reliability of these devices. This suite of initial, JEDEC & accelerated stress tests show that GaN-on-silicon power switches are ready for many commercial and industrial applications, would significantly reduce switching losses and system size and will impact all areas of electricity conversion, ranging from tablet chargers to photovoltaic inverters and electric vehicles.

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“…Of late, these devices have also been fabricated for power switching applications as a result of the basic material advantages of high breakdown voltage, high mobility, high 2DEG density and excellent thermal conductivity [2] - [7]. The underlying physics for these devices are generally understood, but some effects like current collapse (CC) (the recoverable temporary reduction in drain current after the application of a high voltage) and buffer breakdown have not been explained fully and can cause major restrictions to device performance [8,9], particularly in power devices.…”

Section: Introductionmentioning

confidence: 99%