600 W high brightness diode laser pumping source

Xu, D.‐X.; Guo, Zhiwei; Zhang, Tujia; Song, Kuiyan; Guo, Wenbin; Wang, Baohua; Xu, Ray; Chen, Xiaohua

doi:10.1117/12.2250137

Cited by 5 publications

(2 citation statements)

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“…Flexible OFETs have exhibited promising prospect in the nonvolatile memory field, which can be electrically programmed, erased, and read‐out . In the simplest form, the building block for memory is the “bit‐cell” (or “node”) which possesses at least two metastable states.…”

Section: Information Storagementioning

confidence: 99%

When Flexible Organic Field‐Effect Transistors Meet Biomimetics: A Prospective View of the Internet of Things

2019

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The emergence of flexible organic electronics that span the fields of physics and biomimetics creates the possibility for increasingly simple and intelligent products for use in everyday life. Organic field‐effect transistors (OFETs), with their inherent flexibility, light weight, and biocompatibility, have shown great promise in the field of biomimicry. By applying such biomimetic OFETs for the internet of things (IoT) makes it possible to imagine novel products and use cases for the future. Recent advances in flexible OFETs and their applications in biomimetic systems are reviewed. Strategies to achieve flexible OFETs are individually discussed and recent progress in biomimetic sensory systems and nervous systems is reviewed in detail. OFETs are revealed to be one of the best systems for mimicking sensory and nervous systems. Additionally, a brief discussion of information storage based on OFETs is presented. Finally, a personal view of the utilization of biomimetic OFETs in the IoT and future challenges in this research area are provided.

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Section: Information Storagementioning

confidence: 99%

When Flexible Organic Field‐Effect Transistors Meet Biomimetics: A Prospective View of the Internet of Things

2019

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“…24] 2003 横向5.5°~6° [ 26] 2005 横向9.7°~10.7°, 连续1.8 W, 脉冲10 W [27] 2008 横向4°~5°, 侧向3.5°, 连续1.3 W [28] 2010 横向6°, 侧向5°, 连续2.2 W, 光参量积0.47 mm mrad [29] 2014 中国科学院半导体研究所横向10.5°, 200 μm条宽连续输出功率5.75 W [30] 1060 2014 柏林工业大学横向15°, 侧向9°, 峰值功率3 W [31] 2015 横向15°, 侧向11°, 6 μm条宽、2.64 mm腔长, 连续1.8 W [32] 2016 M 2 =1.55, 9 μm条宽功率1.9 W [33] 808 2015 中国科学院长春光学精密机械与物理研究所横向4.91°, 4 mm腔长连续4.6 W [34] 可连续输出几十瓦至数百瓦功率, 主流结构为条宽出300 W功率 [50] . 北京凯普林通过空间叠加激光单管和偏振合束, 200 μm/0.22光纤输出600 W [51] . [57] , 并通过偏振合束和5个波长合束, 400 μm/0.12光纤输出4600 W [58] .…”

Section: 横向模式控制研究进展unclassified