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Kato, Ryo; Maesono, Akikazu; Tye, R. P.

doi:10.1023/a:1010745603645

Cited by 73 publications

(31 citation statements)

References 6 publications

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“…The thermal conductivity of the AlN thin film shows a [6]. Kato et al [5] reported in-plane thermal conductivity values of 5.6 to 8.4 W·m −1 ·K −1 in the range of 100 to 300 nm, which is also higher than those by Zao et al…”

Section: Resultsmentioning

confidence: 78%

“…Kuo et al [4] showed that the thermal conductivity of AlN films is strongly dependent on the substrate. Kato et al [5] measured the in-plane thermal conductivity of AlN films using the AC calorimetric method. Zhao et al [6] recently measured the thermal conductivity of AlN thin films in the thickness range from 100 to 1000 nm employing the photothermal reflectance method and explained the results based on the microstructure analysis.…”

Section: Introductionmentioning

confidence: 99%

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Thermal Conductivity of AlN and SiC Thin Films

et al. 2006

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The thermal conductivity of AlN and SiC thin films sputtered on silicon substrates is measured employing the 3ω method. The thickness of the AlN sample is varied in the range from 200 to 2000 nm to analyze the size effect. The SiC thin films are prepared at two different temperatures, 20 and 500 • C, and the effect of deposition temperature on thermal conductivity is examined. The results reveal that the thermal conductivity of the thin films is significantly smaller than that of the same material in bulk form. The thermal conductivity of the AlN thin film is strongly dependent on the film thickness. For the case of SiC thin films, however, increased deposition temperature results in negligible change in the thermal conductivity as the temperature is below the critical temperature for crystallization. To explain the thermal conduction in the thin films, the thermal conductivity and microstructure are compared using x-ray diffraction patterns.

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Section: Resultsmentioning

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Thermal Conductivity of AlN and SiC Thin Films

et al. 2006

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“…1b. The thermal conductivity of the gold film was determined by the ac-calorimetric method [8]. For the case when a gold film sensor is used with a silicon substrate, the apparent thermal resistance of the gold film layer is negligibly small (±0.5×10 −9 m 2 ·K·W −1 ) in comparison with that of the thermally oxidized SiO 2 films.…”

Section: Methodsmentioning

confidence: 99%

Thermal Conductivity and Interfacial Thermal Resistance: Measurements of Thermally Oxidized SiO2 Films on a Silicon Wafer Using a Thermo-Reflectance Technique

Kato

Hatta

2008

Int J Thermophys

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This article describes the development of a method to measure the normalto-plane thermal conductivity of a very thin electrically insulating film on a substrate. In this method, a metal film, which is deposited on the thin insulating films, is Joule heated periodically, and the ac-temperature response at the center of the metal film surface is measured by a thermo-reflectance technique. The one-dimensional thermal conduction equation of the metal/film/substrate system was solved analytically, and a simple approximate equation was derived. The thermal conductivities of the thermally oxidized SiO 2 films obtained in this study agreed with those of VAMAS TWA23 within ±4 %. In this study, an attempt was made to estimate the interfacial thermal resistance between the thermally oxidized SiO 2 film and the silicon wafer. The difference between the apparent thermal resistances of the thermally oxidized SiO 2 film with the gold film deposited by two different methods was examined. It was concluded that rf-sputtering produces a significant thermal resistance ((20±4.5)×10 −9 m 2 ·K·W −1 ) between the gold film and the thermally oxidized SiO 2 film, but evaporation provides no significant interfacial thermal resistance (less than ±4.5 × 10 −9 m 2 · K · W −1 ). The apparent interfacial thermal resistances between the thermally oxidized SiO 2 film and the silicon wafer were found to scatter significantly (±9 × 10 −9 m 2 · K · W −1 ) around a very small thermal resistance (less than ±4.5 × 10 −9 m 2 · K · W −1 ).

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“…But, a typical 0.2 mm thick organic polarizer consists of layers of polyethylene terephthalate (K i = 0.54 W/mK [19]), tantalum carbide (22.1 W/mK [20]), polyvinyl alcohol (0.34 W/mK [21]) and an acryl compound (0.49 W/mK [22]) with tantalum carbide is valid in the entire domain in Figure 1, the display area and the metal lines. In Equation (3), K is either an effecttive thermal conductivity in the active region of the display or that of metal lines, S is a 2-d heat source, in W/m 2 , due to I 2 R losses in the OLED.…”

Section: The Modelmentioning

confidence: 99%

Effect of Heat Extraction by Metal Lines and Two Sided Cooling on Temperatures in Organic Light Emitting Diode Based Devices

Nath¹

2011

JECTC

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Only a 10 K rise in temperature of organic light emitting diode (OLED) can lower its lifetime by more than 50% and cause other performance deterioration. We have performed two dimensional heat transport analysis and calculated temperatures in an OLED panel. The panel temperatures can easily rise in excess of 10 K. Further we have investigated loss of heat through the metal lines for the extent by which they could lower the temperature. However, this method leads to gradients in temperature which could in turn cause inhomogeneities in a display. But, in lighting panels, it will be feasible to cool the devices from both the sides, which is shown to have a significant impact. The thermal transport model presented here for displays is more extensive in its approach and hence likely to provide more accurate results.

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Untitled

Cited by 73 publications

References 6 publications

Thermal Conductivity of AlN and SiC Thin Films

Thermal Conductivity of AlN and SiC Thin Films

Thermal Conductivity and Interfacial Thermal Resistance: Measurements of Thermally Oxidized SiO2 Films on a Silicon Wafer Using a Thermo-Reflectance Technique

Effect of Heat Extraction by Metal Lines and Two Sided Cooling on Temperatures in Organic Light Emitting Diode Based Devices

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