63.2% high efficiency and high linearity two-stage InGaP/GaAs HBT power amplifier for personal digital cellular phone system

Iwai, Taisuke; Ohara, S.; Miyashita, Takuya; Joshin, K.

doi:10.1109/mwsym.1998.705026

Cited by 21 publications

(3 citation statements)

References 9 publications

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“…For high power added efficiencies (PAE) also a low knee voltage is important. This demand is the main reason for the benefit of Si-BJT [5], III/V HBTs [9] and SiGe HBTs over MESFET´s and HEMT´s [8,10]. Mainly for low operation voltages the linearity of HBT´s is much better than for HEMT´s.…”

Section: Rf Power Using Sige1mentioning

confidence: 99%

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The Proliferation of Silicon Germanium

Schüppen¹,

Tortschanoff²,

Berntgen³

et al. 2000

30th European Solid-State Device Research Conference

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SiGe has already penetrated into the III/V market by rf IC´s in the 0.9-2.4 GHz range. SiGe technologies have a high reliability, operates also at low voltages and nevertheless it reveals 72% PAE @ GSM frequency, 60% PAE for a 3W DCS power HBT and 50% PAE for CDMA at 1.9GHz. Combined with flip chip technology TEMIC´s SiGe1 process is well suited for rf power systems up to 6 GHz. For higher frequencies and due to performance pressure of pure Si from the bottom of the frequency scale and III/V devices from the top, the next generation: SiGe2 proliferates into III/V area in the 7-20 GHz range. SiGe2 technology includes three types of transistors on the same wafer, having 25, 40 and 70 GHz transit frequencies with 7, 4 and 2.5V BV CE0 corresponding breakdown voltages.

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Section: Rf Power Using Sige1mentioning

confidence: 99%

“…However it seems that SiGe1 can handle the highest power for 60% PAE devices at 1.8GHz. Si LDMOS [7] SiGe HBT [3] GaAs HBT [9] PHEMT [8] Si BJT [5] SiGe1 1.9 GHz CDMA PAE value of 50%. This result is slightly better than typical III/V results.…”

Section: Rf Power Using Sige1mentioning

confidence: 99%

The Proliferation of Silicon Germanium

Schüppen¹,

Tortschanoff²,

Berntgen³

et al. 2000

30th European Solid-State Device Research Conference

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“…GaAs HBTs offer unusually high linearity at relatively low levels of dc bias power [1]. Excellent results in IP3 and adjacent channel power ratio (ACPR) were shown in [1][2][3] through linearity characterizations of GaAs and InP-based HBTs. [4] showed that, in the base-emitter junction, the intermodulation (IM) current generated in the resistive part is partially cancelled by the IM current generated in the capacitive part, and that this phenomenon is largely responsible for the unusually good IM performance of these devices.…”

mentioning

confidence: 97%

A novel circuit to achieve high linearity in power amplifiers for WCDMA cellular base transceiver stations

Faiz

Earles

Hou

et al. 2012

WAMICON 2012 IEEE Wireless &Amp; Microwave Technology Conference

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This paper presents a novel circuit to minimize the third order intermodulation distortion component and thus improves the linearity of power amplifiers. The circuit utilizes the nonlinear base-collector and base-emitter diode capacitances of a transistor biased in the saturation region to provide a nonlinear feedback path between the output and input of the amplifier. This concept was implemented in the design of a two watt power amplifier in InGaP/GaAs heterojunction bipolar transistor process. The design demonstrated 51 dBm of output third order intercept point at 17 dBm/tone output power level at 2140 MHz in the WCDMA band. The output P1dB was measured to be about 32 dBm. The amplifier is externally matched, thus provides flexibility to optimize the amplifier across a specific frequency band of interest between 400 MHz and 2700 MHz.

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