64.3: Development of 55‐inch UHD AMOLED TV

Abstract

In this paper, we present a 55" UHD AMOLED TV developed at G8.5 using IGZO backplane and tandem white-OLED with COA (color filter on array), which is considered as one of the feasible options for mass production. We also implement the external optical compensation to achieve good display uniformity.

67‐2: Requirement of a Polyimide Substrate to Achieve High Thin‐film‐transistor Reliability

“…However, the LTPS process is not preferable for mass-production using large sized mother glass, because LTPS TFTs require some high temperature processes such as excimer laser annealing and activation treatment after ion implantation. In contrast, oxide TFTs can be uniformly formed on a large area in a low temperature process without the requirement of any complicated processes [2,3]. Therefore, oxide semiconductor TFTs have attracted much attention in recent years.…”

24.1: Invited Paper: Development of 55 inch 4K AMOLED TV by Inkjet Printing Process

“…AMOLED display has surpassed LCD in many metrics except for Power consumption and Price. The large size AMOLED display on the market today usually utilize white emitting OLED structure (WOLED) by vacuum evaporation and combined with R,G,B color filters to realize full color [1]. Although it can provide superb picture quality and fashionable ID, the color filter's light absorption increases the power consumption.…”

AlO sputtered self‐aligned source/drain formation technology for highly reliable oxide thin film transistor backplane

“…Recently, oxide thin film transistors (TFTs) have been attracting considerable attention for use in large display applications because of their high electrical performance and cost‐effective fabrication processes. Some groups have already demonstrated or mass‐produced organic light‐emitting diode (OLED) displays that use an oxide TFT backplane …”

“…Some groups have already demonstrated or mass-produced organic lightemitting diode (OLED) displays that use an oxide TFT backplane. [1][2][3][4][5] The self-aligned top-gate is a promising candidate structure for use in oxide TFTs because its small size and low parasitic capacitance between the gate and the source/drain electrodes can allow high-resolution and highspeed driving to be realized for display applications. [6][7][8] Several researchers have reported self-aligned source/drain formation processes based on hydrogen diffusion from silicon nitride (SiN) formed by chemical vapor deposition (CVD) 9 or based on oxygen vacancy formation using plasma treatment [10][11][12][13] and excimer laser annealing processes.…”