65-nm full-chip implementation using double dipole lithography

Hsu, Stephen; Chen, J. Fung; Cororan, Noel; Knose, William T.; Broeke, Douglas J. Van Den; Laidig, Thomas L.; Wampler, Kurt E.; Shi, Xuelong; Hsu, Michael; Eurlings, Mark; Finders, Jo; Chiou, Tsann-Bim; Socha, Robert; Conley, Will; Hsieh, Yen Wu; Tuan, Steve; Hsieh, F.

doi:10.1117/12.485445

Cited by 13 publications

(16 citation statements)

References 5 publications

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“…We have proposed two methods for the treatment. One is categorized as a rule-based OPC treatment developed earlier (2,6) , and the other is a full model-based OPC which is currently being used (3) . The OPC methods are introduced and discussed in the following sections.…”

Section: Layout Decomposition and Opc Treatmentmentioning

confidence: 99%

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Development of automatic OPC treatment and layout decomposition for double dipole lithography for low-k1 imaging

Chiou¹,

Chen²,

Hsu³

et al. 2005

SPIE Proceedings

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To extend the application of current optical lithographic tools to next generation production technology, it is necessary to reduce the k1 factor in Rayleigh's resolution equation. Double dipole lithography (DDL) is one of the candidates for a low-k1 imaging technique and it is a viable solution for 65-and 45-nm technology nodes. Because DDL takes has the advantage of extreme off-axis illumination of the dipole, the printing capability of small features as well as their through-pitch common process window can be enhanced. However, as a dipole illuminator gains the benefits of high contrast only for structures perpendicular to the dipole orientation, the original mask layout must be converted into horizontal and vertical components and printed in a double exposure. Throughput will be sacrificed due to the multiple exposures. Nevertheless, DDL mask manufacture is relatively simple compared to the production of the more complicated phase shift mask (PSM) and chromeless phase lithography (CPL). As regards an overlay issued from the separate image composition, several papers have shown the minor effect on pattern fidelity using the current ArF scanner. To split the design layout according to the pattern orientation, the double exposure scheme needs an automatic layout conversion algorithm. To integrate the H V conversion with model-and/or rule-based optical proximity corrections (OPCs), several approaches for pattern decomposition associated with OPC treatment have been suggested. In this paper we will go over the development of model-and rule-based OPC treatment and will focus on current technology for accurate model-based OPC development with empirical model calibration. Using the technique the lithographic performances such as pattern fidelity, process window as well as overlay error sensitivity will be demonstrated. We focus on a 65-nm technology node with k1 near 0.31. Based on the success of tool development and verification, the DDL with full-chip OPC-treated decomposition will become a mature low-k1 imaging solution.

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Section: Layout Decomposition and Opc Treatmentmentioning

confidence: 99%

“…Note that in this case k1 is 0.31 using an ArF source with 0.75NA. In reality the dipole technique has been demonstrated as having over 0.25um depth of focus (DOF) of a common process window (3,4) . A dipole illuminator needs only a traditional binary chrome mask at this node.…”

Section: Introductionmentioning

confidence: 99%

Development of automatic OPC treatment and layout decomposition for double dipole lithography for low-k1 imaging

Chiou¹,

Chen²,

Hsu³

et al. 2005

SPIE Proceedings

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“…For example, Numerical Technologies [1,2] proposes a path to 65 nm node using a mask intensive "full phase-shifting" methodology while ASML MaskTools is pursuing Chromeless Phase Lithography [3] which also employs a quartz etch in addition to subresolution mask structures. Double Dipole lithography [4] achieves low k imaging through a decomposition and compensation of device layer content into two complementary masks. LSI Logic [5] highlights the printing of darkfield levels, such as contact layer, using a high transmission embedded phase shift mask in conjunction with subresolution diffracting structures while Intel Corp. describes alternating aperture phase shift mask approach for contact layer [6].…”

Section: Introductionmentioning

confidence: 99%

Critical evaluation of photomask needs for competing 65-nm node RET options

Progler

Xiao

2003

SPIE Proceedings

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A comprehensive set of numerical, mask pattern operators is developed and applied for the purpose of understanding photomask fabrication tolerances supporting aggressive, optical lithography resolution enhancement. Using these numerical operators, the content and fidelity of the photomask is systematically degraded and wafer level results predicted using experimentally calibrated simulation. The concept of a mask sensitivity matrix is introduced and used as a bridge to full Monte Carlo analysis of photomask fabrication errors. A statistical approach to analyze mask defect tolerances for resolution enhancement options is presented within the same numerical framework. Such methodical and detailed analysis of mask construction parameters is a vital step toward understanding the complex interaction between mask quality and printed image and hence the delivery of 65 nm node lithography capability.

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“…The quality of the aerial image, in terms of resolution, image contrast through defocus or effective background dose, is better for one tone of mask for the type of feature being printed. Several papers have shown that dark field (DF) masks reduce the background dose for the second pass of dual dipole exposure, thus making the OPC easier to determine and the mask easier to write [1,2]. DF masks also eliminate the potential for phase conflicts in alternating aperture phase shift masks [3].…”

Section: Introductionmentioning

confidence: 99%

Negative tone 193-nm photoresists

Pugliano¹,

Bolton²,

Barbieri³

et al. 2003

Advances in Resist Technology and Processing XX

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Recently several authors have specifically noted the advantages of using negative tone resists for patterning narrow trenches. The growing interest stems from several factors. Firstly aerial image models indicate that negative tone systems should have improved process windows for patterning narrow trenches, relative to their positive tone counterparts. Secondly, negative tone resists are thought to be advantageous for minimizing variations of CD through pitch for trench layers thus reducing the optical proximity effect for certain exposure conditions. Finally, negative tone systems arguably circumvent the issue of resist poisoning from low k dielectric materials. The combination of these arguments has warranted our effort in the development of negative tone 193 nm resist systems, and this submission will present recent advances in this area. In particular the presentation will focus on prototypical negative tone formulations for use in patterning trenches with bright field imaging. We will present our results on a variety of performance attributes such as dissolution behavior, LER control, etch performance, resolution and process windows for these systems and we will provide a materials basis for using negative tone systems for patterning trenches for back end layers.

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65-nm full-chip implementation using double dipole lithography

Cited by 13 publications

References 5 publications

Development of automatic OPC treatment and layout decomposition for double dipole lithography for low-k1 imaging

Development of automatic OPC treatment and layout decomposition for double dipole lithography for low-k1 imaging

Critical evaluation of photomask needs for competing 65-nm node RET options

Negative tone 193-nm photoresists

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