2014
DOI: 10.4028/www.scientific.net/msf.778-780.871
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650V SiC JFET for High Efficiency Applications

Abstract: This paper presents for the first time a 650V SiC JFET switch. Although this application class is highly competitive and occupied by Silicon devices the characterization data show unique features which make the SiC switch an outstanding option for future system integration.

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Cited by 3 publications
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“…The combination of low gate charge, low Q oss and E oss , together with an excellent body diode in one device is unique, and a value proposition which cannot be met by Silicon switches. [4]…”
Section: Resultsmentioning
confidence: 99%
“…The combination of low gate charge, low Q oss and E oss , together with an excellent body diode in one device is unique, and a value proposition which cannot be met by Silicon switches. [4]…”
Section: Resultsmentioning
confidence: 99%
“…In the short circuit mode, JFETs typically show excellent capability, due to the rapid decrease of short circuit current with rising junction temperature. JFETs with better short circuit ruggedness than a comparable IGBT and CoolMos have been reported earlier [7]. In this paper, we investigate the static and dynamic characteristics of fabricated 600 V SiC trench JFETs along with their short circuit capability.…”
Section: Introductionmentioning
confidence: 92%