2011 IEEE International Conference on IC Design &Amp; Technology 2011
DOI: 10.1109/icicdt.2011.5783222
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65nm PD-SOI glitch-free Retention Flip-Flop for MTCMOS power switch applications

Abstract: This work presents a partially depleted Silicon-on-Insulator (PD-SOI) low-static power consumption Retention Flip-Flop (REFF). This flip-flop is designed in order to avoid wake-up transient glitches. In addition specific leakage reduction techniques are used to compensate the extra leakage currents induced by the SOI floating body effects. This leads to a static power consumption reduced by 2 for only 6% of extra silicon area, compared to a regular floating body implementation.

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“…Scan-based techniques, which are used for serially saving and restoring internal retention cells, also suffer from latency and energy overhead [8]. The State Retention Power Gating (SPRG) technique addresses the above-mentioned PG technique's limitations [9][10][11][12][13]. This technique uses unique retention cells to retain the flip-flops (FFs) values during power down (standby state).…”
Section: Introductionmentioning
confidence: 99%
“…Scan-based techniques, which are used for serially saving and restoring internal retention cells, also suffer from latency and energy overhead [8]. The State Retention Power Gating (SPRG) technique addresses the above-mentioned PG technique's limitations [9][10][11][12][13]. This technique uses unique retention cells to retain the flip-flops (FFs) values during power down (standby state).…”
Section: Introductionmentioning
confidence: 99%