2021
DOI: 10.1002/sdtp.14852
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66‐1: High Resolution Quantum Dot Global Shutter Imagers

Abstract: Quantum dot photodetectors are a promising platform technology that ST Microelectronics has developed, scaled‐up, and is ready to commercialize. Our quantum dot‐based global shutter imagers are responsive from UV to SWIR wavelengths at high resolution, high efficiency, and low dark currents, with good reliability and very competitive cost. Sampling to customers is now ready to start.

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Cited by 12 publications
(4 citation statements)
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“…To determine the IQ obtained with the various illumination options STMicroelectronics' 2.2μm pixel pitch global shutter sensor optimized for imaging in the SWIR region of the light spectrum was used 1 . This Quantum Film sensor exhibits a Quantum Efficiency of >50% and MTF @Nyquist/2 of 0.75, with above 99.94% shutter efficiency and 64dB dynamic range, which make it ideal for this assessment 2,3 .…”
Section: Characterization Setupmentioning
confidence: 99%
“…To determine the IQ obtained with the various illumination options STMicroelectronics' 2.2μm pixel pitch global shutter sensor optimized for imaging in the SWIR region of the light spectrum was used 1 . This Quantum Film sensor exhibits a Quantum Efficiency of >50% and MTF @Nyquist/2 of 0.75, with above 99.94% shutter efficiency and 64dB dynamic range, which make it ideal for this assessment 2,3 .…”
Section: Characterization Setupmentioning
confidence: 99%
“…Focal plane arrays (FPAs) based on QD absorbers are gaining momentum, with some even reaching commercial maturity. [9][10][11] Here, the optimized pixel stack is transferred to a custom-designed readout integrated circuit (ROIC). The chips are fabricated in 130-nm technology on 200-mm wafers.…”
Section: Focal Plane Array Integrationmentioning
confidence: 99%
“…Due to the semimetal/narrow bandgaps of bulk mercury chalcogenides and their concomitant large Bohr exciton radii (∼40 nm), Hg X ( X = S, Se, Te) nanocrystals display extreme bandgap tunability, from 1.5 eV to 20 meV (830 nm to 6.2 μm) for HgTe. For this reason, Hg X QDs are explored as low-cost solution processable alternatives for midwave infrared (3–5 μm) photodetection. , However, using HgTe QDs to explore short wave infrared (1 to 2 μm) imaging remains unexplored. There is great commercial interest in short wave infrared (SWIR) imaging due to the high spatiotemporal resolution for applications such as defense, noninvasive biomedical imaging, mobile devices, machine vision, advanced drive-assistance programs in cars, and more. To date, most mercury chalcogenide QD research has focused on larger particles with optical bandgaps beyond the current detection range of commercial SWIR cameras (greater than 1600 nm). Considerably less is known about the synthetic routes and optical properties of small (<3 nm) HgTe QDs, despite potential applications in near and shortwave infrared (NIR/SWIR) technologies such as SWIR imaging agents, photodetectors, light-emitting diodes, and other optoelectronic applications. , …”
Section: Introductionmentioning
confidence: 99%