69‐1: Etch Properties of Silicon Nitride Films Using a New In‐Line Equipment with Atmospheric Glow Plasma for the OLED Flexible Display

Abstract

DBD non-thermal atmospheric pressure plasma (NAPP) is suitable for the OLED display manufacturing process using flexible substrate because it is low-temperature atmospheric pressure process, low cost process and does not need a vacuum system. High dynamic etch rate of 220À·cm/s in Si 3 N 4 thin films was obtained in flow rate ratio (O 2 /CF 4 ) of 0.13, rf 480W, the speed of 10mm/s in a 200mm new inline NAPP system. About 5% increase of dynamic etch rate by N 2 gas injection was conformed. Etch profile of Si 3 N 4 film with patterned PR shows perfectly isotropic without undercut because the species such as CF 3 , COF 2 , F and O have low energy and chemical reaction.