2020
DOI: 10.1002/sdtp.14047
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69‐1: Invited Paper: Trap‐dependent Electrical Characteristics of Organic Semiconductor Devices

Abstract: Trap states strongly affect the electrical characteristics of organic semiconductor devices. Here, we report how the spatial distribution of the traps affects the current density-voltage (J-V) characteristics of single-charge carrier devices. We found that when the traps are located near a charge-injecting electrode, the electric field and thus the operating voltage of a device increase, leading to an increased device resistivity. We analyzed the J-V characteristics vs. position of the traps by assuming that t… Show more

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Cited by 4 publications
(3 citation statements)
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“…According to our drift‐diffusion simulation, however, the charge density of the dopant in the EML is comparable to that of the host, even though the concentration is only ≈5 vol%. [ 15 ] This is because, in general, the dopant possesses energetically more favorable states for accommodating charges compared to the host, leading to spontaneous transfer of charges from the host to the dopant. Moreover, none of the previous studies paid attention to how the defect profile affects charge and exciton dynamics in PHOLEDs and hence their lifetimes.…”
Section: Introductionmentioning
confidence: 99%
“…According to our drift‐diffusion simulation, however, the charge density of the dopant in the EML is comparable to that of the host, even though the concentration is only ≈5 vol%. [ 15 ] This is because, in general, the dopant possesses energetically more favorable states for accommodating charges compared to the host, leading to spontaneous transfer of charges from the host to the dopant. Moreover, none of the previous studies paid attention to how the defect profile affects charge and exciton dynamics in PHOLEDs and hence their lifetimes.…”
Section: Introductionmentioning
confidence: 99%
“…By comparison, D3-type device possess a better overall performance: 60% lifetime promotion, 3% EQE decline and 6% voltage rise at 10 mA/cm 2 . Usually, common layer materials are selected to modulate the drift-diffusion property for balanced electron-hole recombination profiles [6][7][8], as shown in Figure 7. In our emitting layer, the transport speed of electron is several orders of magnitude faster than that of hole.…”
Section: (C) Efficiency-lifetime Trade-off In Oled Can Be Clarified B...mentioning
confidence: 99%
“…In order to overcome this difficulty, we suggested the method of intentionally inserting the defects with known energetics and a controlled density in a particular position in organic devices (8). This method allows ones to obtain the one-to-one correspondence between the device performance and the property of defects, i.e., a density, a position and the energy levels of their highest occupied molecular orbital (HOMO), lowest unoccupied molecular orbital (LUMO) and their excitons.…”
mentioning
confidence: 99%