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Selective benzylic C–H activation of solvent toluene and m-xylene by an iron–tin cluster complex: Fe2(μ-)2(CO)8

“…IR m CO (cm À1 in hexane) for the mixture: 2044 (vs), 1998 (m), 1979 (s). By means of fractional crystallizations at À20°C from a methylene chloride/hexane solvent mixture, 5 mg of pure trans-Fe 2 [l-SnBu t (CH 2 Ph)] 2 (CO) 8 A 30 mg amount of Fe 2 (l-SnBu t 2 ) 2 (CO) 8 (0.037 mmol) was dissolved in 7 mL of m-xylene in a 100 mL 3-neck flask. The reaction was heated to reflux for 100 min.…”

“…Recently, a bimetallic Ir-Sn complex was shown to be a catalyst for the alkylation of arenes, which proceeds via aryl C-H activation of the arene substrate at an Ir center [9]. We have now found that the bimetallic Fe-Sn cluster Fe 2 (l-SnBu t 2 ) 2 (CO) 8 , 1, is capable of selectively activating only the benzylic C-H bond in toluene and mxylene, and propose a radical mechanism for the reaction. This is the first example of selective benzylic C-H activation of alkylaromatic compounds at Sn centers, and we wish to report our preliminary findings in this communication.…”

“…Tin has also been shown to selectively activate the aryl C-H bonds in alkylaromatic compounds. For example, the complex ''(CF 3 COO) 4 Sn" [8] activates the aryl C-H bond in benzene as well as in p-xylene. Recently, a bimetallic Ir-Sn complex was shown to be a catalyst for the alkylation of arenes, which proceeds via aryl C-H activation of the arene substrate at an Ir center [9].…”

“…An ORTEP of the molecular structure of Fe 2 (l-SnBu t 2 ) 2 (CO)8 , 1 showing 30% probability thermal ellipsoids. Selected bond distances (in Å) are as follows:…”

Deposition of Copper by Plasma-Enhanced Atomic Layer Deposition Using a Novel N-Heterocyclic Carbene Precursor

“…1 Several potential copper(I) and copper(II) precursors have been reported for chemical vapor deposition (CVD) and atomic layer deposition (ALD), including β-diketonates, 2 β-diketiminates, 3 amidinates, 4 guanidinates, 5 aminoalkoxides, 6 and pyrrolylaldiminates. 7 Of these precursors, the exclusively N-bonded ligands are interesting due to their lack of Cu-O bonds, making them less susceptible to oxygen inclusion in the deposited copper film as well as in the barrier and adhesion layers. ALD has been proposed as an alternative method to CVD for depositing conformal, ultra-thin films at comparatively lower temperatures.…”