7.3 A 28nm embedded SG-MONOS flash macro for automotive achieving 200MHz read operation and 2.0MB/S write throughput at T&lt;inf&gt;i&lt;/inf&gt;, of 170&amp;#x00B0;C

Taito, Yasuhiko; Nakano, Masaya; Okimoto, Hiromi; Okada, Daisuke; Ito, Takashi; Kimura, Takashi; Noguchi, Kozo; Hidaka, Hideto; Yamauchi, Takayoshi

doi:10.1109/isscc.2015.7062961

Cited by 28 publications

(8 citation statements)

References 3 publications

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“…Among the candidates for high-temperature memory, for non-volatile memory elements, flash memory has been developed 4 . The maximum temperature for the stable operation of flash memory has been reported to be 443 K 5 . For operation at higher temperatures, alternative operation schemes are required in place of conventional field-effect operation for switching between two discrete current states (ON and OFF).…”

mentioning

confidence: 99%

Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps

Suga

Suzuki

Shinomura

et al. 2016

Sci Rep

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Highly stable, nonvolatile, high-temperature memory based on resistance switching was realized using a polycrystalline platinum (Pt) nanogap. The operating temperature of the memory can be drastically increased by the presence of a sharp-edged Pt crystal facet in the nanogap. A short distance between the facet edges maintains the nanogap shape at high temperature, and the sharp shape of the nanogap densifies the electric field to maintain a stable current flow due to field migration. Even at 873 K, which is a significantly higher temperature than feasible for conventional semiconductor memory, the nonvolatility of the proposed memory allows stable ON and OFF currents, with fluctuations of less than or equal to 10%, to be maintained for longer than eight hours. An advantage of this nanogap scheme for high-temperature memory is its secure operation achieved through the assembly and disassembly of a Pt needle in a high electric field.

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mentioning

confidence: 99%

Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps

Suga

Suzuki

Shinomura

et al. 2016

Sci Rep

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“…As results, the world's first adoption of 28nm automotive eFlash macro has been demonstrated by using SG-MONOS [3]. Table 1 summarizes the macro features.…”

Section: State-of-the-art Eflash Technologymentioning

confidence: 91%

“…The necessary functions for driver assistant system such as safety, security, sensing and connectivity for the car can be integrated into single chip by adopting 40nm SG-MONOS. Multi CPU cores involving the hardware security module, functional safeties [3] satisfying ISO26262 with the redundant processing and field built-in test, and the large Flash memory of up to 8MB are implemented into our latest 32bit automotive MCU [2]. In addition very low power consumption of < 0.9W under the stringent automotive hot temperature has been attained.…”

Section: State-of-the-art Eflash Technologymentioning

confidence: 99%

Prospect of embedded non-volatile memory in the smart society

Yamauchi

2015

2015 International Symposium on VLSI Technology, Systems and Applications

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Embedded Flash (eFlash) is widely accepted by various applications because of reducing overall costs of system development, production and inventory. Continuous evolution of eFlash such as the split-gate charge-trapping memory has satisfied the most stringent quality requirement for automotive applications. Smart society for offering a better quality of life would diversify NV memory until the establishment of emerging memories. Add-on type eFlash with a few additional masks would replace the stand-alone data flash for adaptive tuning and security over the network. Towards the possible convergence of NV-memory in smart society, emerging memories such as ReRAM and STT-MRAM are progressing. Excellent features of smaller rewrite energy with the extending rewrite cycles could contribute to the outstanding energy saving such as normally-off systems.

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“…The Flash programming scheme has been adapted to satisfy the new constraints imposed by the smart connected object application field, to remain competitive with respect to the new devices, very aggressive in terms of energy consumption and scaling [8,9]. Last but not least, the cell architecture has been modified in a 2T memory and split gate (1.5T) [10][11][12] or even, using a FD-SOI technology [13]. This kind of improvements can decrease the cell energy consumption and leakages, in order to address the ultra-low power applications.…”

Section: Introductionmentioning

confidence: 99%

Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction

Marca

Postel-Pellerin

Kempf

et al. 2018

Microelectronics Reliability

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Nowadays, the study of physical mechanisms that occur during Flash memory cell life is mandatory when reaching the 40nm and beyond nodes in terms of reliability. In this paper we carry out a complete experimental method to extract the floating gate potential evolution during the cell aging. The dynamic current consumption during a Channel Hot Electron operation for a NOR Flash is a proper quantitative marker of the cell degradation. Here both drain and bulk currents are measured and monitored throughout the endurance tests. We coupled these characteristics with quasi-static measurements to correlate the cell degradation with an equivalent transistor. The final goal is to be able to split the physical effects of repetitive hot carrier and Fowler-Nordheim operations, typical of Flash memories, to extract the electrical parameters evolution on a simple equivalent transistor.

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7.3 A 28nm embedded SG-MONOS flash macro for automotive achieving 200MHz read operation and 2.0MB/S write throughput at T<inf>i</inf>, of 170°C

Cited by 28 publications

References 3 publications

Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps

Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps

Prospect of embedded non-volatile memory in the smart society

Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction

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