70.3: Current-Scaling a-Si:H TFT Pixel Electrode Circuit for AM-OLEDs

Abstract

We fabricated and characterized the amorphous silicon thin-film transistor (a-Si:H TFT)

a‐InGaZnO thin‐film transistors for AMOLEDs: Electrical stability and pixel‐circuit simulation

“…28 Here, we apply a-InGaZnO TFTs to a currentscaling current-mirror pixel circuit. 29 This circuit has similar performance as the previous circuit with a simpler driving scheme.…”

“…29 Parameters used to simulate this circuit are listed in Table 6 for both a-InGaZnO TFTs and a-Si:H TFTs. 29 Smaller device sizes (W/L = 20 µm/4 µm) and lower supply voltages (V DD = 12 V) can be used for this circuit based on a-InGaZnO TFTs. Figure 15 shows an example of operation waveforms simulated by HSPICE.…”

P‐14: AM‐OLED Pixel Circuits Based on a‐InGaZnOThin Film Transistors

“…Our group has previously explored the possible application of a-InGaZnO TFTs to a current-scaling pixel circuit that provides a wide dynamic OLED current (I OLED ) range and compensation abilities [19]. Here, we apply a-InGaZnO TFTs to a current-scaling current-mirror pixel circuit [20]. This circuit has Fig.…”

“…5. The operation detail of this circuit can be found elsewhere [20]. Parameters used to simulate this circuit are listed in Table 3 for both a-InGaZnO TFTs and a-Si:H TFTs [20].…”

“…The operation detail of this circuit can be found elsewhere [20]. Parameters used to simulate this circuit are listed in Table 3 for both a-InGaZnO TFTs and a-Si:H TFTs [20]. Smaller device sizes (W/L = 20μm/4μm) and lower supply voltages (V DD = 12V) can be used for this circuit based on a-InGaZnO TFTs.…”