70 nm gate-length InAs PHEMTs with maximum oscillation frequency of 640 GHz

Lisen, 张立森 Zhang; Dong, 邢东 Xing; Peng, 徐鹏 Xu; Shixiong, 梁士雄 Liang; Junlong, 王俊龙 Wang; Yuangang, 王元刚 Wang; Dabao, 杨大宝 Yang; Zhihong, 冯志红 Feng

doi:10.3788/irla201645.0720004

红外与激光工程

2016

DOI: 10.3788/irla201645.0720004

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70 nm gate-length InAs PHEMTs with maximum oscillation frequency of 640 GHz

张立森 Zhang Lisen¹,

邢东 Xing Dong²,

徐鹏 Xu Peng³

et al.

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70 nm gate-length InAs PHEMTs with maximum oscillation frequency of 640 GHz

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