702.3 A·cm⁻²/10.4 mΩ·cm² <i>β</i>-Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation

Ma, Yongjian; Zhou, Xuanze; Tang, Wenbo; Zhang, Xiaodong; Xu, Guangwei; Zhang, Li; Chen, Tiwei; Dai, Shige; Bian, Chunxu; Li, Botong; Zeng, Zhongming; Long, Shibing

doi:10.1109/led.2023.3235777

Cited by 27 publications

(12 citation statements)

References 29 publications

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“…16. Since the source regions were a) [60] . The CBL here was realized via oxygen annealing at 1200 °C for 6 h. The top access region with the thickness of 100 nm was then defined by the Si ion implantation.…”

Section: Cavets and Cbl Structurementioning

confidence: 99%

A comprehensive review of recent progress on enhancement-mode β-Ga₂O₃ FETs: Growth, devices and properties

Li¹,

Zhang²,

Zhang³

et al. 2023

J. Semicond.

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Power electronic devices are of great importance in modern society. After decades of development, Si power devices have approached their material limits with only incremental improvements and large conversion losses. As the demand for electronic components with high efficiency dramatically increasing, new materials are needed for power device fabrication. Beta-phase gallium oxide, an ultra-wide bandgap semiconductor, has been considered as a promising candidate, and various β-Ga2O3 power devices with high breakdown voltages have been demonstrated. However, the realization of enhancement-mode (E-mode) β-Ga2O3 field-effect transistors (FETs) is still challenging, which is a critical problem for a myriad of power electronic applications. Recently, researchers have made some progress on E-mode β-Ga2O3 FETs via various methods, and several novel structures have been fabricated. This article gives a review of the material growth, devices and properties of these E-mode β-Ga2O3 FETs. The key challenges and future directions in E-mode β-Ga2O3 FETs are also discussed.

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Section: Cavets and Cbl Structurementioning

confidence: 99%

A comprehensive review of recent progress on enhancement-mode β-Ga₂O₃ FETs: Growth, devices and properties

Li¹,

Zhang²,

Zhang³

et al. 2023

J. Semicond.

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“…This material has excellent conduction properties owing to an oxygen vacancy donor band 16 that belongs to a monoclinic structure with a space group of C2/m. 17 β-Ga 2 O 3 has gained significant attention in recent years because of its outstanding features and capabilities such as thermal stability (with a melting point of 1730 °C), 4,18 chemical and mechanical stability, 19 high breaking voltage (8 MV/cm), 20 and high Baliga's figure of merit (BFOM) (≈3000). 21 Diverse research groups have manufactured β-Ga 2 O 3 thin films, individual nanowires, array nanowires, and other nanostructures using numerous methods during the last few decades.…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh Performance of β-Ga₂O₃-Based MSM Solar-Blind Photodetectors Fabricated via the Glancing Angle Deposition Technique

Yaghoubizadeh,

Eshraghi,

Hajati

et al. 2023

ACS Appl. Electron. Mater.

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Glancing angle deposition (GLAD) is a simple, cost-effective, and mask-free method for fabricating microstructures by controlling the morphological structure. In this study, we investigated the effect of the deposition angle on the growth of nanorod structures on P−Si (100) and quartz substrates using the RF-sputtering method. The X-ray diffraction (XRD) patterns of samples fabricated at various deposition angles of 0°, 45°, and 65°reveal the monoclinic structure of β-Ga 2 O 3 . As the flux angle of the sputtered atoms increased, the intensity and width of the (−110), (−202), and (111) planes decreased, while the intensity of the (−111) plane increased. Moreover, the photoluminescence spectra of β-Ga 2 O 3 nanocolumns showed five Gaussian bands with center wavelengths of 390, 434, 470, 494, and 525 nm, whose intensity is strongly affected by the deposition angle due to the increased path length of incident light. The characterization results of the fabricated metal−semiconductor−metal photodetector (MSM-PD) revealed the improvement of the optical properties of the sample deposited at a 65°oblique angle, which showed a responsivity of 95.28 A/W, a detectivity of 2.51 × 10 13 Jones, a quantum efficiency of 4.8 × 10 4 %, and a rise time of 44 ms for UVC light.

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“…β-Ga 2 O 3 high-resistive p-like-well structures whose V th depends on the dopant concentration of deep acceptors such as nitrogen (N) [14][15][16] and magnesium (Mg) [16][17][18] have been investigated as alternative structures in which V th does not strongly depend on the recess depth or fin width. In particular, a lateral transistor using a thin Ndoped layer grown by molecular beam epitaxy 19) and a vertical U-shaped trench gate metal-oxide-semiconductor field-effect transistor (MOS FET) using an N-ion implantation layer 20) were reported to have normally-off characteristics. However, the former transistor operated only in the subthreshold region and the later transistor required a large positive gate-bias voltage (V gs ) of 25 V for operation due to a nonoptimized dose of N + implantation.…”

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confidence: 99%

Nitrogen-doped β-Ga₂O₃ vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm² V⁻¹ s⁻¹

Wakimoto¹,

Lin²,

Thieu³

et al. 2023

Appl. Phys. Express

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We demonstrate high-performance normally-off multi-fin β-Ga2O3 vertical transistors with a wide fin width from 1.0 µm to 2.0 µm by using a nitrogen-doped β-Ga2O3 high-resistive layer grown by halide vapor phase epitaxy. Normally-off operation was achieved with a threshold voltage of ≥1.3 V and a specific on-resistance of 2.9 mΩ·cm2 and a current density of 760 A/cm2 at a gate voltage of +10 V. The estimated MOS channel field effect mobility was ~100 cm2/V·s. These findings offer important insights on the development of Ga2O3 MOSFETs and show the great promise of Ga2O3 vertical power devices.

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702.3 A·cm⁻²/10.4 mΩ·cm² β-Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation

Cited by 27 publications

References 29 publications

A comprehensive review of recent progress on enhancement-mode β-Ga₂O₃ FETs: Growth, devices and properties

A comprehensive review of recent progress on enhancement-mode β-Ga₂O₃ FETs: Growth, devices and properties

Ultrahigh Performance of β-Ga₂O₃-Based MSM Solar-Blind Photodetectors Fabricated via the Glancing Angle Deposition Technique

Nitrogen-doped β-Ga₂O₃ vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm² V⁻¹ s⁻¹

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702.3 A·cm⁻²/10.4 mΩ·cm² β-Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation

Cited by 27 publications

References 29 publications

A comprehensive review of recent progress on enhancement-mode β-Ga2O3 FETs: Growth, devices and properties

A comprehensive review of recent progress on enhancement-mode β-Ga2O3 FETs: Growth, devices and properties

Ultrahigh Performance of β-Ga2O3-Based MSM Solar-Blind Photodetectors Fabricated via the Glancing Angle Deposition Technique

Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2 V−1 s−1

Contact Info

Product

Resources

About

A comprehensive review of recent progress on enhancement-mode β-Ga₂O₃ FETs: Growth, devices and properties

A comprehensive review of recent progress on enhancement-mode β-Ga₂O₃ FETs: Growth, devices and properties

Ultrahigh Performance of β-Ga₂O₃-Based MSM Solar-Blind Photodetectors Fabricated via the Glancing Angle Deposition Technique

Nitrogen-doped β-Ga₂O₃ vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm² V⁻¹ s⁻¹