706‐GHz GaAs CW fundamental‐mode TUNNETT diodes fabricated with molecular layer epitaxy

Nishizawa, Jun Ichi; Płotka, P.; Kurabayashi, Toru; Makabe, H.

doi:10.1002/pssc.200779256

Cited by 35 publications

(21 citation statements)

References 5 publications

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“…[4][5][6][7] Operating frequency of oscillators with electron devices has also been rapidly increasing from the millimeter wave side. [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] Among the electron devices, resonant tunneling diodes (RTDs) have been considered as one of the candidates for compact THz oscillators at room temperature. [16][17][18][19][20][21][22][23] Oscillations up to 1.98 THz 23 and relatively high output power in the sub-THz region 24 have been reported for these oscillators.…”

Section: Introductionmentioning

confidence: 99%

Measurements of temperature characteristics and estimation of terahertz negative differential conductance in resonant-tunneling-diode oscillators

2017

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The temperature dependences of output power, oscillation frequency, and current-voltage curve are measured for resonant-tunneling-diode terahertz (THz) oscillators. The output power largely changes with temperature owing to the change in Ohmic loss. In contrast to the output power, the oscillation frequency and current-voltage curve are almost insensitive to temperature. The measured temperature dependence of output power is compared with the theoretical calculation including the negative differential conductance (NDC) as a fitting parameter assumed to be independent of temperature. Very good agreement was obtained between the measurement and calculation, and the NDC in the THz frequency region is estimated. The results show that the absolute values of NDC in the THz region significantly decrease relative to that at DC, and increases with increasing frequency in the measured frequency range.

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Section: Introductionmentioning

confidence: 99%

Measurements of temperature characteristics and estimation of terahertz negative differential conductance in resonant-tunneling-diode oscillators

2017

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“…Power generation with GaAs TUNNETT diodes from 100 GHz up to 755 GHz has been reported [34], [35], but the highest output powers above 300 GHz were achieved in the aforementioned thirdharmonic mode [36].…”

Section: Transit-time Devicesmentioning

confidence: 99%

Negative differential resistance devices for generation of terahertz radiation

Eisele

2015

SPIE Proceedings

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This paper discusses the principles of operation, state of the art, and future potential of active two-terminal devices for generation of low-noise, continuous-wave terahertz radiation. These devices use transit-time, transferred-electron, and quantum-mechanical effects (or a combination of them) to create a negative differential resistance (NDR) at the frequency of interest. Many different types of NDR devices have been proposed since the earliest days of semiconductor devices and studied in detailed simulations for their power generation potential, but have yet to be demonstrated experimentally. The paper focuses on NDR devices that not only yielded significant output powers at millimeter waves frequencies and higher, but also have the strong potential of generating radiation at terahertz frequencies. Examples of such NDR devices are resonant tunneling diodes (RTDs), superlattice electronic devices (SLEDs), and InP Gunn devices. Examples of their state-of-the-art results are output powers of 0.2 mW at 443 GHz and 5 µW at 1.53 THz from InGaAs/AlAs double barrier RTDs on InP substrate; 5.0 mW at 123.3 GHz, 1.1 mW at 155.1 GHz, and 0.52 mW at 252.8 GHz from GaAs/AlAs superlattice electronic devices on GaAs substrate; and 330 µW at 412 GHz, 86 µW at 479 GHz, and 18 µW at 502 GHz from InP Gunn devices.

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“…Recent optical THz devices include the p-type Ge laser [2], THz quantum cascade laser (QCL) [3], THz wave parametric amplifier [4], and the uni-travelling carrier photodiode (UTC-PD) [5]. On the electron device side, devices such as the tunnel injection transit time negative resistance (TUNNETT) diode [6], Gunn diode [7], high-electronmobility transistor (HEMT) [8], and resonant tunnelling diode (RTD) [9] are being studied. THz waves will provide new capabilities for applications in various fields, including ultra-broadband wireless communications [10], spectroscopic sensing and imaging [11], [12], and high-resolution radar [13].…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence Characterisation of High Current Density Resonant Tunnelling Diodes for Terahertz Applications

Jacobs

Stevens

Hogg

2016

IEICE Trans. Electron.

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SUMMARYHigh structural perfection, wafer uniformity, and reproducibility are key parameters for high-volume, low cost manufacture of resonant tunnelling diode (RTD) terahertz (THz) devices. Low-cost, rapid, and non-destructive techniques are required for the development of such devices. In this paper, we report photoluminescence (PL) spectroscopy as a non-destructive characterisation technique for high current density InGaAs/AlAs/InP RTD structures grown by metal-organic vapour phase epitaxy (MOVPE) for THz applications. By using a PL line scanning technique across the edge of the sample, we identify characteristic luminescence from the quantum well (QW) and the undoped/n + InGaAs layers. By using the Moss-Burstein effect, we are able to measure the free-electron concentration of the emitter/collector and contact layers in the RTD structure. Whilst the n + InGaAs luminescence provides information on the doping concentration, information on the alloy composition and compositional variation is extracted from the InGaAs buffer layer. The QW luminescence provides information on the average well width and provides a monitor of the structural perfection with regard to interface and alloy disorder.

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706‐GHz GaAs CW fundamental‐mode TUNNETT diodes fabricated with molecular layer epitaxy

Cited by 35 publications

References 5 publications

Measurements of temperature characteristics and estimation of terahertz negative differential conductance in resonant-tunneling-diode oscillators

Measurements of temperature characteristics and estimation of terahertz negative differential conductance in resonant-tunneling-diode oscillators

Negative differential resistance devices for generation of terahertz radiation

Photoluminescence Characterisation of High Current Density Resonant Tunnelling Diodes for Terahertz Applications

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