750 MHZ Zero-Power Mems-Based Wake-Up Receiver With -60 DBM Sensitivity

Cassella, Cristian; Assylbekova, Meruyert; Zhu, Wancheng; Chen, Guofeng; Kulik, Piotr; Michetti, Giuseppe; McGruer, N.E.; Rinaldi, Matteo

doi:10.31438/trf.hh2018.101

Cited by 5 publications

(1 citation statement)

References 3 publications

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“…Our wake-up receiver is an AlN resonator integrated with an electrostatic AlN switch [6][7][8]. Both our receiver and other low-power MEMS wake-up receiver approaches rely on resonant switches or resonators with very small actuation and contact gaps [9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Limitations on MEMS design resulting from random stress gradient variations in sputtered thin films

Zhu¹,

Assylbekova²,

McGruer³

2021

J. Micromech. Microeng.

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Residual stress gradients often negatively affect the performance of MEMS devices, causing film curvature and changing the designed gaps of released structures. In this work, we built folded beams designed to compensate for the film curvature and keep the actuator gaps of sensitive resonant switches constant. While the average stress gradient is cancelled by our designs, we find that random variations in the stress gradient (rather than random variations in device dimensions) cause the majority of the observed variation in actuator gap. To our knowledge, this has not previously been reported, and represents an important limitation on MEMS designs using sputtered films. The standard deviation of the 400 nm contact gap for a folded beam of total length 152 µm and width 108 µm was measured to be about 134 nm. Using parameters measured from test cantilevers, our simulations predict that about 98% of the variation in contact gap is due to stress gradient variation, rather than variations in device geometry.

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Section: Introductionmentioning

confidence: 99%

Limitations on MEMS design resulting from random stress gradient variations in sputtered thin films

Zhu¹,

Assylbekova²,

McGruer³

2021

J. Micromech. Microeng.

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Zero and Near Zero Power Intelligent Microsystems

Olsson

Christal

Bogoslovov

2019

J. Phys.: Conf. Ser.

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The Near Zero Power RF and Sensor Operations (N-ZERO) program from DARPA has created a new, nanowatt class of intelligent sensors and RF receivers enabling systems that are passive or nearly passive while operating in an intelligent standby mode. Such systems can be persistently powered by small batteries for many years or perpetually via miniature energy harvesters. The program sought wake-up receivers with a sensitivity of -100dBm and physical sensors that could classify vehicles at a range of 10 m, with power consumption on order of the self-discharge rate of a small battery. Furthermore, researchers with designs that fit other applications, such as chemical and IR sensors, were open to participate as well. From the program multiple approaches have emerged featuring passive and active MEMS devices and subthreshold CMOS circuits. The overall goals of the program have helped to redefine the state-of-the art in ultra-low power receivers, machine learning processors, and passive physical sensors.

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