780 nm narrow-linewidth self-injection-locked WGM lasers

Lai, Yi Hsuan; Eliyahu, Danny; Ganji, Setareh; Moss, Robert; Solomatine, Iouri; Lopez, Eloy; Tran, Elaine; Savchenkov, Anatoliy A.; Matsko, Andrey B.; Williams, Skip

doi:10.1117/12.2553258

Cited by 12 publications

(8 citation statements)

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“…In addition, there is ample room for the optimization of tuning speed, output power, system size, and compactness. The Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences [37], National Time Service Center, Chinese Academy of Sciences [35], Hong Kong Polytechnic University in China [28], Institute of Electron Technology in Poland [83], Australian Defense Science and Technology Group [29], Axsun Technology in the USA [84], Stel'makh Polyus Research Institute in Russia [30], among other institutions [85][86][87][88][89] have conducted in-depth research on filter-ECDLs.…”

Section: Filter-ecdlmentioning

confidence: 99%

“…The performance of ultra-narrow-linewidth semiconductor lasers has been considerably optimized based on the utilization of high-Q whispering-gallery-mode resonator (WGMR) lasers [91]. In 2020, OEwaves Inc. in the USA [89] reported a 780-nm self-injection-locked ECDL with a hertz-level instantaneous linewidth. The gain chip emits laser, which is coupled into a WGMR made of mechanically polished crystalline MgF 2 through a prism.…”

Section: Filter-ecdlmentioning

confidence: 99%

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Advances in wide-tuning and narrow-linewidth external-cavity diode lasers

Cui

Lei

Chen

et al. 2022

Sci. China Inf. Sci.

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The external-cavity diode laser is advantageous in terms of low noise, high side-mode suppression ratio, high temperature stability, simple structure, and low cost, which has been the preferred scheme to realize wide-tuning and narrow-linewidth characteristics. Thus, it has been widely used in optical communication, lidar, environmental monitoring, spectral analysis, optical coherence tomography, and other frontier fields. Herein, we introduce the technical scheme and review the development status of wide-tuning and narrow-linewidth external-cavity diode lasers in detail. Primarily, the structure, working principles, and performance characteristics of external-cavity diode lasers are deeply analyzed according to different structures. The structural characteristics, key technologies, optical performance and application fields of state-of-theart studies in recent years are discussed. Finally, the challenges and potential development prospects of wide-tuning and narrow-linewidth external-cavity diode lasers are analyzed and discussed.

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Section: Filter-ecdlmentioning

confidence: 99%

Section: Filter-ecdlmentioning

confidence: 99%

Advances in wide-tuning and narrow-linewidth external-cavity diode lasers

Cui

Lei

Chen

et al. 2022

Sci. China Inf. Sci.

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“…This can simplify the fabrication process, reduce the device cost, and without degradation of the device performance. In fact, sidewall grating DFB lasers can achieve the advantages of high output power, high side-mode suppression ratio (SMSR), and narrow linewidth [8][9][10] .…”

Section: Introductionmentioning

confidence: 99%

Design and fabrication of 780nm Fabry-Perot and distributed-feedback laser towards narrow linewidth

Zhang,

Cai,

Wang

et al. 2024

Advanced Fiber Laser Conference (AFL2023)

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Cold atoms have important applications in high-precision metrology, sensing, navigation, etc. Laser cooling is crucial to acquire cold atoms [1][2] . In particular, 780 nm narrow linewidth laser is a key enabling factor for cold Rb atoms. The linewidth of the 780nm laser should be below 1 MHz to exactly match the energy levels of Rb atoms. This far exceeds the linewidth limit of Fabry-Perot (FP) lasers. Distributed Feedback (DFB) lasers exhibit much narrower linewidths compared to FP lasers [3] . However, the period of the grating for a 780nm DFB laser is much smaller than the period of the gratings of DFB lasers working at longer wavelength, e.g. at telecommunication wavelength. This presents a significant challenge in manufacturing 780nm DFB lasers [4] . In this work we designed a 780nm DFB laser having a sidewall grating with a period of 360nm, a duty cycle of 50%, an etching depth of 550nm, and a ridge waveguide width of 1.2μm. The laser's epitaxial layer's fundamental properties were verified by a 780nm FP laser, with a 110mW single-sided output power. The DFB's grating was fabricated by electron-beam lithography (EBL) and Inductively Coupled Plasma (ICP) etching.Ultimately, our goal is to achieve a DFB laser with a linewidth below 1 MHz.

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“…Laser frequency noise can be reduced using an external reference cavity such as a table-scale Fabry-Pérot vacuum-spaced reference cavity and a Pound-Drever-Hall (PDH) lock 6 . Miniaturization of these cavities has been achieved with compact bulkoptic whispering-gallery-mode resonators (WGMs) 7 , fused silica rods 8,9 , and more recently photonic-integrated resonators [10][11][12] . Lasers stabilized to these cavities are prone to absolute frequency drift over long averaging times and typically require stabilization of the laser frequency to an atomic reference such as a rubidium saturation absorption spectroscopy (SAS) 8 .…”

Section: Introductionmentioning

confidence: 99%

Dual-stage laser stabilization with a frequency-tunable integrated 118 million Q reference cavity disciplined to 780 nm rubidium spectroscopy

Isichenko,

Chauhan,

Harrington

et al. 2024

Quantum Sensing, Imaging, and Precision Metrology II

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Integrated narrow-linewidth lasers in the visible and near-IR are a critical component of next-generation atomic systems for quantum sensing, time keeping, and navigation. Technologies such as low frequency noise lasers that are tunable and referenced to an absolute frequency set by atomic transitions are required for sensing applications such as cold atom interferometers. While bulk-optic reference cavities can be used for laser noise reduction and stabilization, longer-term frequency drifts are mitigated with a secondary lock to an atomic reference using power-consuming bulk optic technologies such as an acousto-optic frequency shifter. Photonic integrated cavities based on ultra-low-loss silicon nitride (SiN) waveguides enable laser stabilization in a wafer-scale integration platform. Incorporating a secondary lock of these integrated cavities to an atomic reference is an attractive solution for compact chip-scale long term stable references. In this paper we demonstrate the use of a thermo-optic tunable, 118 million Q, 0.44 dB/m loss reference cavity for simultaneous laser frequency noise reduction and absolute frequency referencing to 780 nm rubidium spectroscopy. By tuning the integrated cavity resonance by a range >200 MHz using a thermal tuner with 20 MHz/mW efficiency at over 1 kHz tuning rate, we demonstrate long-term locking of the stabilized laser to rubidium saturation absorption spectroscopy. We achieve up to 4 orders magnitude frequency noise reduction, integral linewidth (betaseparation) reduction from 5 MHz (free-running) to 326 kHz (dual lock) and simultaneously a fractional frequency drift of 8.5e-12 at 1 second, two orders of magnitude improvement compared to locking to the cavity only. These results represent a compact and robust laser for photonic integrated atomic systems that can be extended to probing and locking to narrower linewidth transitions such as the rubidium two-photon at 778 nm and for laser frequency control sequences in cold atom experiments.

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780 nm narrow-linewidth self-injection-locked WGM lasers

Cited by 12 publications

References 0 publications

Advances in wide-tuning and narrow-linewidth external-cavity diode lasers

Advances in wide-tuning and narrow-linewidth external-cavity diode lasers

Design and fabrication of 780nm Fabry-Perot and distributed-feedback laser towards narrow linewidth

Dual-stage laser stabilization with a frequency-tunable integrated 118 million Q reference cavity disciplined to 780 nm rubidium spectroscopy

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