780 nm Oxide-Confined VCSEL With 13.5 Gb/s Error-Free Data Transmission

Liu, Mengmeng; Wu, Meng‐Che; Tan, Fei; Bambery, Rohan; Feng, Milton; Holonyak, N.

doi:10.1109/lpt.2014.2303169

Cited by 3 publications

(4 citation statements)

References 11 publications

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“…In addition, the lattice temperature is calculated by solving for the steady-state solution of (11), where e r and e z represent the unit vectors in the radial and the z-direction.…”

Section: Simulationmentioning

confidence: 99%

“…This equation assumes a local thermal equilibrium between the charge carriers and the lattice solving for a single local temperature T. The air surrounding the samples is assumed to be a good insulator by setting the heat flux to zero and the bottom of the substrate is fixed to the ambient temperature of 300 K. The heat source used in (11) takes into account joule heating, heat generated by recombination, Thomson heat and heat loss by radiation [37]. The radiative heat loss is modeled by the optical generation rate G opt and the energy of the photon, which is calculated using Planck constant h and the photon frequency f. To also include the anisotropic thermal conductivity in the DBR layers, the thermal conductivity κ was modified in the z-direction resulting in a value called κ aniso .…”

Section: Simulationmentioning

confidence: 99%

“…are triggered by the defects forming in high-stress regions like the mesa sidewall or the edge of the oxide aperture [9,10]. The stress in those regions originates from the wet-oxidation process used to produce the oxide apertures, which is used in various VCSELs emitting in the wavelength range of 780-1150 nm [11][12][13][14]. In this process, an Al x Ga 1−x As layer with a high aluminum concentration x is exposed to a high temperature water vapor between 350 • C and 500 • C [15].…”

Section: Introductionmentioning

confidence: 99%

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Electrical-stress driven oxidation in 940 nm oxide-confined VCSEL

Pusterhofer¹,

Fabbro²,

Coppeta³

et al. 2021

Semicond. Sci. Technol.

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In this work, accelerated stress tests have been performed on oxide confined vertical cavity surface emitting LASER arrays to study the formation of defects degrading the performance of the device. One such defect is an additional oxide volume forming at the oxide aperture edge, which is used for optical and electrical confinement. After producing an additional oxide volume the sample was investigated using transmission electron microscopy to estimate the oxidation speed. To produce further insights into the formation process, the temperature during such a stress test was estimated by experimentally measuring the thermal resistance, and by a thermodynamic transport simulation. Both methods produced very similar results showing a temperature increase of around 22 K for a dissipated power of 3.5 mW per emitter. However this temperature rise is very small when compared to oxidation models found in literature and should not be enough to promote the oxidation. This indicates the presence of a new enhanced oxidation mechanism, which could be connected to corrosion based failure mechanisms reported in literature.

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“…In addition, the lattice temperature is calculated by solving for the steady-state solution of (11), where e r and e z represent the unit vectors in the radial and the z-direction.…”

Section: Simulationmentioning

confidence: 99%

Section: Simulationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electrical-stress driven oxidation in 940 nm oxide-confined VCSEL

Pusterhofer¹,

Fabbro²,

Coppeta³

et al. 2021

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The VCSEL presents a great number of merits such as greater coupling efficiency [17], single-mode operation [18], high speed and lesser threshold [19], reliability [20], enhanced quantum efficiency and optical power [21].The improvements of VCSEL compared to distributed bragg reflector (DBR) and distributed feedback (DFB) laser are little power consumption and low price because of its compactness [22].…”

Section: Introductionmentioning

confidence: 99%

Effect of Optical Filtering for Error-free Transmission in Optical Networks

Sudhakar¹,

Reddy²,

Rao³

2014

IJCA

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This paper presents a new approach to maximize the dispersion-limited distance of vertical cavity surface emitting lasers (VCSELs) operating at 1550.127 nm with 10 Gb/s bit rate. Optical non return to zero (NRZ) signal is generated by using an optical band pass filter (OBPF) along with MachZehnder interferometer (MZI) at the output of VCSEL. A third order super-Gaussian and fourth order Butterworth filters are used as optical filters. The dependence of bit error rate (BER), the eye opening and transmission distance on variations in the optical filter and MZI parameters is investigated. The numerical results signify that with the proposed scheme one can enhance the single mode fiber (SMF) link-length to 127 km in the absence of electrical or optical dispersion compensation methods. Results are compared between the proposed method and transmitters implemented with VCSEL diode. General TermsOptical communications.

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Oxide-Confined VCSELs for High-Speed Optical Interconnects

Feng

Holonyak

2018

IEEE J. Quantum Electron.

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780 nm Oxide-Confined VCSEL With 13.5 Gb/s Error-Free Data Transmission

Cited by 3 publications

References 11 publications

Electrical-stress driven oxidation in 940 nm oxide-confined VCSEL

Electrical-stress driven oxidation in 940 nm oxide-confined VCSEL

Effect of Optical Filtering for Error-free Transmission in Optical Networks

Oxide-Confined VCSELs for High-Speed Optical Interconnects

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