785 nm Raman Spectroscopy of CVD Diamond Films

May, Paul; Smith, James A.; Rosser, KN

doi:10.1557/proc-1039-p15-02

Cited by 7 publications

(6 citation statements)

References 21 publications

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“…The graphite peak is not visible. This condition proves that the layer after implantation is free from graphitic bonds as reported earlier in [8]. The wave number of the first and second order of Silicon peaks was found to be 500 and 1000 cm -1 , this is in agreement with the result in [9].…”

Section: Raman Spectroscopysupporting

confidence: 91%

SURFACE MODIFICATION OF CHEMICAL VAPOR DEPOSITION (CVD) DIAMOND FILM/SI(111) BY IMPLANTATION WITH Fe + B IONS IN CONJUNCTION WITH THEIR MAGNETIC PROPERTIES

Purwanto

Dimyati²,

Iskandar³

et al. 2017

gnd

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Surface Modification of Chemical Vapor Deposition (CVD) Diamond Film/Si(111) by Implantation with Fe+B ions In Conjunction with their Magnetic Properties. Surfcace modification of CVD manufactured diamond films on Si(111) substrate has been performed by means of Fe+B ion implantation followed by Argon ion gas sputtering with acceleration energy 20 keV and ion dose 1x1015 and 1x1016 ions cm-2. Scanning Transmission Electron Microscope (STEM) imaging shows the formation of amorphous carbon layer on top of the diamond film with thickness ca. 100 nm on the implanted sample and ca. 20 nm on the sample without implantion. The morphology and magnetic property of the films surface were characterized by Atomic and Magnetic Force Microscopy (AFM/MFM). The Electron Energy Loss Spectroscopy EELS analysis has revealed amount of Boron atoms distributed homogenously inside the carbon amorphous layer on both samples which is in close agreement to the result of Raman Spectroscopy showing the changes of the Raman spectrum due to implantation. The magnetic properties of the samples after Fe+B ion implantion were additionally investigated by means of Vibrating Sample Magnetometer (VSM). By increasing ion doses at constant energy 20 keV, the magnetoresistance property decreased from +45% on the sample implanted with dose 1x1015 to +8% on the sample implanted with dose 1x1016 ions cm-2.

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Section: Raman Spectroscopysupporting

confidence: 91%

SURFACE MODIFICATION OF CHEMICAL VAPOR DEPOSITION (CVD) DIAMOND FILM/SI(111) BY IMPLANTATION WITH Fe + B IONS IN CONJUNCTION WITH THEIR MAGNETIC PROPERTIES

Purwanto

Dimyati²,

Iskandar³

et al. 2017

gnd

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“…The "Diamond" peak (at 1332 cm −1 ) corresponding to the first-order Raman scattering mode, being characteristic of diamond [13] and assigned to the T 2g zone centre mode of the cubic diamond phase, at first glance does not show up in the Amorphous C case either. However, for the Amorphous C sample this peak is considerably broadened and thus also contributes to the asymmetric broad band observed between 1000 and 1700 cm -1 (blue solid line in Fig.…”

Section: Sample Preparation and Characterizationmentioning

confidence: 97%

Remote plasma cleaning of optical surfaces: Cleaning rates of different carbon allotropes as a function of RF powers and distances

Cuxart

Reyes-Herrera

Šics

et al. 2016

Applied Surface Science

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An extended study on an advanced method for the cleaning of carbon contaminations on large optical surfaces using a remote inductively coupled low-pressure RF plasma source (GV10x downstream asher) is reported in this work. Technical as well as scientific features of this scaled up cleaning process are analysed, such as the cleaning efficiency for different carbon allotropes (amorphous and diamond-like carbon) as a function of feedstock gas composition, RF power (ranging from 30 to 300W), and source-object distances (415 to 840 mm). The underlying physical phenomena for these functional dependences are discussed.

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“…Data was also taken with 473 and 660 nm excitation. The data taken at 473 nm also showed luminescence background, however the background was absent for the data taken at 660 nm[67]. The β-Ga 2 O 3 Raman peaks were present in all three dataset and the same are shown in figure S4.…”

mentioning

confidence: 58%

Surface zeta potential and diamond growth on gallium oxide single crystal

Mandal,

Arts,

Knoops

et al. 2021

Preprint

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In this work a strategy to grow diamond on β-Ga 2 O 3 has been presented. The ζ-potential of the β-Ga 2 O 3 substrate was measured and it was found to be negative with an isoelectric point at pH ∼ 4.6. The substrates were seeded with mono-dispersed diamond solution for growth of diamond. The seeded substrates were etched when exposed to diamond growth plasma and globules of gallium could be seen on the surface. To overcome the problem ∼100 nm of SiO 2 and Al 2 O 3 were deposited using atomic layer deposition. The nanodiamond seeded SiO 2 layer was effective in protecting the β-Ga 2 O 3 substrate and thin diamond layers could be grown. In contrast Al 2 O 3 layers were damaged when exposed to diamond growth plasma. The thin diamond layers were characterised with scanning electron microscopy and Raman spectroscopy. Raman spectroscopy revealed the diamond layer to be under compressive stress of 1.3 -2.8GPa.

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785 nm Raman Spectroscopy of CVD Diamond Films

Cited by 7 publications

References 21 publications

SURFACE MODIFICATION OF CHEMICAL VAPOR DEPOSITION (CVD) DIAMOND FILM/SI(111) BY IMPLANTATION WITH Fe + B IONS IN CONJUNCTION WITH THEIR MAGNETIC PROPERTIES

SURFACE MODIFICATION OF CHEMICAL VAPOR DEPOSITION (CVD) DIAMOND FILM/SI(111) BY IMPLANTATION WITH Fe + B IONS IN CONJUNCTION WITH THEIR MAGNETIC PROPERTIES

Remote plasma cleaning of optical surfaces: Cleaning rates of different carbon allotropes as a function of RF powers and distances

Surface zeta potential and diamond growth on gallium oxide single crystal

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