8‐3: Invited Paper: Back‐Channel Defect Termination for p‐Channel Oxide‐TFTs

Abstract

Oxide semiconductor‐TFT technology is widely accepted as a technology that realizes next‐generation display and flexible device technologies. However, the absence of high‐performance p‐channel oxide‐TFT is still recognized as the largest technological barrier that hinders the potentials of the oxide‐TFT device application. Here we investigated the TFT characteristics of p‐channel SnO and Cu2O oxide‐TFTs and clarified the origin of the poor TFT characteristics. It was found that their TFT performances for both the devices are largely affected backchannel donor‐type defect. We also developed effective backchannel defect termination for p‐channel oxide‐TFTs to improve their p‐channel TFT characteristics.

The Significance of an In Situ ALD Al2O3 Stacked Structure for p‐Type SnO TFT Performance and Monolithic All‐ALD‐Channel CMOS Inverter Applications

“…Recently, various passivation layers have been adopted to passivate surface defect states of SnO and enhance TFT performance and air stability. [21,[26][27][28] However, those processes still include inevitable air exposure and contamination between deposition processes. Also, the mechanism of improvement in SnO TFT performances by passivation has yet to be determined.…”