8.4L: Late‐News Paper: Electrical Properties of a‐IGZO Films Depending on Trap States

Abstract

We investigated the photo-response of a-IGZO thin films under light illumination. The photo-response was compared before and after annealing. As the annealing temperatures increase, photoresponse changes quite substantially. We explored the photoresponses of a-IGZO thin films under light illumination with various wavelengths. The photo-responses involve the photoexcitation and the dark relaxation phenomena in a-IGZO thin films. The photo-responses of samples were monitored and analyzed in terms of the trap states and oxygen vacancies. The quite large change of photo-response by the annealing was analyzed in terms of trap states and oxygen vacancies.