800-nm Band Cross-Polarized Photon Pair Source Using Type-II Parametric Down-Conversion in Periodically Poled Lithium Niobate

Abstract

We report a high-efficiency source of cross-polarized photon pairs via type-II quasi-phase matched spontaneous parametric down-conversion using periodically poled lithium niobate (PPLN). The photon pairs are generated from the PPLN in a fifth-order quasi-phase matching condition around 800 nm, which matches the wavelength band of efficient Si avalanche photodiodes. We obtained the photon-pair production rate of 6.8×105 s-1 mW-1.

Generation of Cross-Polarized Photon Pairs via Type-II Third-Order Quasi-Phase Matched Parametric Down-Conversion

“…3) In particular, quasi-phase matched (QPM; hereafter, we use this abbreviation for ''quasi-phase matched'' as well as for ''quasi-phase matching'') nonlinear optical devices based on periodically poled ferroelectric crystals have attracted considerable attention in various proof-ofprinciple experiments in QICT. [4][5][6][7][8][9] For example, QPM devices implemented on periodically poled lithium niobate (PPLN) 6,7) or on periodically poled potassium titanyl phosphate (PPKTP) [8][9][10] have been used to generate photon pairs via SPDC. A PPLN waveguide has been used to generate photon pairs via type-0 QPM SPDC in the 800 nm band.…”

Short interference fringe and high event rate of two-photon interference using up-converted photon pairs

“…Our system exploits bulk periodically-poled LiNbO 3 (PPLN) crystals and a pulsed laser system, 24,25) as illustrated in Fig. 1.…”

Polarity Inversion of GaN via AlN Oxidation Interlayer Using Metal–Organic Vapor Phase Epitaxy

“…These polarizations result in strong optical nonlinearity, [ 10 ] making nitride semiconductors also suitable for application in wavelength conversion devices. The large absorption edge energies of GaN (3.4 eV) and AlN (6.2 eV) make them suitable for application in spontaneous parametric downconversion devices for use as quantum light sources in the bandwidth range around 800 nm, which is detectable with Si photodiodes [ 11 ] and deep‐ultraviolet (DUV) second‐harmonic generation (SHG) devices, for sterilization and disinfection, [ 12 ] respectively.…”