808 nm GaAsP/GaInP laser diode arrays grown by MOCVD using AsH3 and TBP

Abstract

The combination of AsH 3 and TBP have been used as group V precursors in the MOCVD growth of GaAsP single quantum well (SQW) layers. The optical and electrical characteristics of GaAsP/GaInP QW laser diode arrays have been demonstrated. IntroductionAl-free laser diode arrays emitting at 808 nm, suitable for Nd: YAG pumping are currently subject of intense study. In contrast with 9xx nm Al-free lasers, the semiconductor materials of 808 nm are more challenging to produce with the highest performance. In conventional MOCVD growths, arsine (AsH 3 ) and phosphine(PH 3 ) are usually used as the group V arsenic(As) and phosphorus(P) precursors, however, the strong temperature sensitivity of As/P distribution coefficient is a problem. Although the combination of TBAs and TBP were used as the substitutions,