SummaryA system and a method providing high-efficiency implantation and release of Kr ions in metal foils have been developed. Implantation and release measurements were performed with a static mass spectrometer. Efficient implantation/retention of rare-gas isotopic ions in a target and their subsequent efficient volatilization from the target is the first of two central requirements for developing an ultrasensitive (10 parts per trillion) method to determine the isotopic content of rare gases. In a number of initial Kr ion implantation runs in Cu, with subsequent volatilization of the implanted Kr by heating, implantation/release efficiencies averaging about 52% were observed. This low value was determined to be due to only partial interception of the Kr ion beam by the target. With modifications to the target assembly, mass spectrometer, and target size, the efficiencies for implantation/release of Kr in Cu were raised to essentially 100%. These efficiencies meet the first requirement for developing this method.Further experiments were conducted to determine at what increasing values of Kr ion fluence implantation efficiencies would start to fall below 100% as a result of ion beam/target processes (e.g., sputtering effects, Kr diffusion and radiation damage in the Cu target). In the three highest fluence runs, the implantation/retention efficiency decreased from 88% down to 28% for increasing fluence values. From these data, it was calculated that the threshold for a loss in efficiency was at a fluence of about 2 x 10 14 ions/cm 2 .With the successful development of a method for 100% efficiency in implantation/release of Kr ions in Cu, the second requirement for developing an ultrasensitive method to determine the isotopic content of rare gases can now be addressed. High-efficiency isotopic separation and measurement methods for rare-gas ions by static mass spectrometric techniques will be developed.iii