82 COMPARATIVE INVESTIGATION OF THE EFFECTS AS CAUSED BY SEMICONDUCTOR INFRA-RED LASER (λ=810 nm) vs. 4.0-MHz RADIOSURGICAL UNIT

Plotkina, O.V.; Krasnikov, A.G.; Plouzhnikov, M.S.; Ryabova, M.A.; Nevorotin, Alexey J.

doi:10.1016/s1572-1000(08)70084-x

Photodiagnosis and Photodynamic Therapy

2008

DOI: 10.1016/s1572-1000(08)70084-x

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82 COMPARATIVE INVESTIGATION OF THE EFFECTS AS CAUSED BY SEMICONDUCTOR INFRA-RED LASER (λ=810 nm) vs. 4.0-MHz RADIOSURGICAL UNIT

O.V. Plotkina¹,

A.G. Krasnikov²,

M.S. Plouzhnikov³

et al.

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82 COMPARATIVE INVESTIGATION OF THE EFFECTS AS CAUSED BY SEMICONDUCTOR INFRA-RED LASER (λ=810 nm) vs. 4.0-MHz RADIOSURGICAL UNIT

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