9.2 W/mm (13.8 W) AlGaN/GaN HEMTs at 10 GHz and 55 V drain bias

Zhang, A.P.; Rowland, L.B.; Kaminsky, E.B.; Tucker, Jesse B.; Kretchmer, J.; Allen, A.F.; Cook, J. W.; Edward, Brian

doi:10.1049/el:20030107

Cited by 33 publications

(12 citation statements)

References 4 publications

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“…The details of device fabrication were described elsewhere. 20 The optical-defect mapping was performed with an inverted-light microscope (Nikon Epiphot 200) using a 5ϫ objective. A scanning pattern was initiated, which images the entire wafer except for the edge.…”

Section: Methodsmentioning

confidence: 99%

Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors

Zhang

Rowland

Kaminsky

et al. 2003

Journal of Elec Materi

151

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Device performance and defects in AlGaN/GaN high-electron mobility transistors (HEMTs) have been correlated. Surface depressions and threading dislocations, revealed by optical-defect mapping and atomic force microscopy (AFM), compromised the effectiveness of the SiN x surface-passivation effect as evidenced by the gate-lag measurements. The residual carriers in the GaNbuffer layer observed from the capacitance-voltage depth profile have been attributed to the point defects and threading dislocations either acting as donors or causing local charge accumulations. Deep-level transient-spectroscopy measurements showed the existence of several traps corresponding to surface states and bulk-dislocation defects. The formation of electron-accumulation regions on the surface or (and) in the GaN-buffer layer was confirmed by currentvoltage measurements. This second, virtual gate formed by electron accumulations can deplete the channel and cause a large-signal gain collapse leading to degraded output power. A good correlation was established between the device performance and defects in AlGaN/GaN HEMT structure.

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Section: Methodsmentioning

confidence: 99%

Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors

Zhang

Rowland

Kaminsky

et al. 2003

Journal of Elec Materi

151

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show abstract

“…In recent years, both metal-organic chemical vapor deposition (MOCVD) [1]- [5] and molecular beam epitaxy (MBE) [2], [3], [6]- [8] growth techniques have been used to produce high-quality devices with very good RF performance. Whereas the majority of reported devices grown by MBE have utilized RF plasmaassisted growth (PA-MBE), we report here devices fabricated on epitaxial materials grown by MBE using ammonia as the N-source (ammonia-MBE) with excellent power and efficiency performance.…”

Section: Introductionmentioning

confidence: 99%

Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

Poblenz

Corrion

Recht

et al. 2007

IEEE Electron Device Lett.

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In this letter, we report on the microwave power and efficiency performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/mm with an associated power-added efficiency (PAE) of 63% was measured at V ds = 48 V on passivated devices. At 10 GHz, an output power density of 11.2 W/mm with a PAE of 58% was achieved for V ds = 48 V. These results are the highest reported power performance for AlGaN/GaN HEMTs grown by ammonia-MBE and the first reported for ammonia-MBE on SiC substrates. Index Terms-AlGaN, ammonia molecular beam epitaxy (ammonia-MBE), GaN, high-electron mobility transistors (HEMTs), microwave power field-effect transistors (FETs), modulated-doping FETs (MODFETs).

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“…AlGaN-GaN HEMT devices with good RF performance have been fabricated on material grown by both metal-organic chemical vapor deposition (MOCVD) [1]- [4] and molecular beam epitaxy (MBE) [5]- [8] growth techniques. The advantages of MBE growth include high uniformity, in situ monitoring, and sharp interfaces.…”

mentioning

confidence: 99%

Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE

Rajan

Waltereit

Poblenz

et al. 2004

IEEE Electron Device Lett.

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Abstract-We report AlGaN-GaN high electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on SiC substrates with excellent microwave power and efficiency performance. The GaN buffers in these samples were doped with carbon to make them insulating. To reduce gate leakage, a thin silicon nitride film was deposited on the AlGaN surface by chemical vapor deposition. At 4 GHz, an output power density of 6.6 W/mm was obtained with 57% power-added efficiency (PAE) and a gain of 10 dB at a drain bias of 35 V. This is the highest PAE reported until now at 4 GHz in AlGaN-GaN HEMTs grown by MBE. At 10 GHz, we measured an output power density of 7.3 W/mm with a PAE of 36% and gain of 7.6 dB at 40-V drain bias.Index Terms-Carbon, gallium nitride, high electron mobility transistor (HEMT), microwave power, molecular beam epitaxy (MBE), power-added efficiency (PAE), silicon nitride.

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9.2 W/mm (13.8 W) AlGaN/GaN HEMTs at 10 GHz and 55 V drain bias

Cited by 33 publications

References 4 publications

Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors

Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors

Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE

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