9.3: Active‐Matrix Organic Light Emitting Diode Using Inverse Staggered Poly‐Si TFT with a Center‐Offset Gated Structure

Abstract

We have developed a low cost AM backplane using non‐laser polycrystalline silicon (poly‐Si) having inverse staggered TFT. The thin‐film transistors (TFTs) have a center‐offset gated structure to reduce the leakage current without scarifying the on‐currents. A center‐offset length of the TFTs has 3 μm for both switching and driving TFTs. Finally, we have made a 2.2 inch QQVGA (160 × 120) active‐matrix organic light emitting diode (AMOLED) display with conventional 2T 1C pixel circuits.