90 °C continuous-wave operation of GaInAsP/InP membrane distributed-reflector laser on Si substrate

Abstract

The temperature dependence of a GaInAsP/InP membrane distributed-reflector laser bonded on a Si substrate — which showed a low threshold current (0.29 mA) and a relatively high differential quantum efficiency (23% from the front side) at 20 °C — was measured. A characteristic temperature of the threshold current, T0, of 84 K and a sub-mA threshold current operation up to 90 °C were obtained under a continuous-wave (CW) condition. Furthermore, single-mode operation up to 80 °C was also obtained.

Prospects for Electronic Photonic Integration

“…Similarly the electronic fabrication flow is not compromised by the electronics. Powerful platforms including a range of lasers, high speed detectors and passive components are under development [9,[21][22][23], providing not only a route to electronic-photonic integration at the wafer scale, but also a scalable roadmap towards electronic-nanophotonic integration [8]. The recently awarded WIPE program which aims to achieve intimate integration for industry sources InP PICs and electronics circuits will also be presented [24].…”

High-differential quantum efficiency operation of GaInAsP/InP membrane distributed-reflector laser on Si

“…After the first selective-area regrowth of the GaInAsP passive waveguide with a bandgap wavelength of 1.22 µm, using organometallic vapor-phase epitaxy (OMVPE), the n-and p-InP side cladding layers were separately regrown to form a lateral-current-injection structure. 23) Compared with the previous work, 22) the doping concentration of the p-InP side cladding layer was reduced from 2 × 10 18 to 5 × 10 17 cm −3 in order to reduce the optical absorption loss from 42 to 22 cm −1 . 24) Next, a 1-µm-thick SiO 2 cladding layer was deposited, and the III-V wafer was bonded to the Si substrate using benzocyclobutene (BCB).…”

“…Herein, we report a membrane DR laser that exhibits a low threshold current and the highest external differential quantum efficiency ever reported for a membrane laser. By adopting a lower doping concentration of the p-InP side cladding layer and a shorter distance between the p-side electrode and the active region than those of previous work, 22) the low differential quantum efficiency due to the high waveguide loss was resolved. A threshold current of 0.21 mA, an external differential quantum efficiency of 32% from the front facet, and a power-conversion efficiency of 12% were obtained.…”

“…21) Then, after adjusting the grating period of the DBR section, a low threshold current of 0.29 mA (threshold current density of 880 A=cm 2 ) and a high external differential quantum efficiency of 23% from the front side were obtained using DFB and DBR section lengths of 30 and 50 µm, respectively. 22) However, the light output power at a bias current of 1 mA was 0.12 mW, which was insufficient for the aforementioned condition of the light source for on-chip applications.…”

“…1(a). This device was fabricated using the same initial wafer used in our previous work, 22) which consisted of five GaInAsP quantum wells sandwiched by InP optical confinement layers with a total thickness of 270 nm.…”