90 nm CMOS MMIC amplifier

Masud, M.A.; Zirath, Herbert; Ferndahl, Mattias; Vickes, H.‐O.

doi:10.1109/rfic.2004.1320570

Cited by 44 publications

(21 citation statements)

References 8 publications

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“…For LNA implementation, common-source (CS) configuration with inductive source degeneration and transformer feedback technique is usually adopted [39][40][41][42][43] to satisfy low supply voltage requirements. When the operation frequency increases, CS configuration suffers from low power gain.…”

Section: Low Noise Amplifier (Lna)mentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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Abstract:In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their functions in a MMW system. Finally, there is a conclusion and description of the future trend of the development of the MMW ICs.

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Section: Low Noise Amplifier (Lna)mentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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“…To summarize the results, the overall findings verify the proposed standard as a viable sub-micron mechanism to control the operating bandwidth of a low noise wideband amplifier. Table 1 documents the synopsis of the 90 nm amplifier performance to make a comparative assessment with regard to published results of millimeter wave deep sub-micron amplifiers [11][12][13][17][18][19][20][21][22] The proposed amplifier provides better port-isolation as calculated from the reflection parameters with low noise and reduced power penalty. To establish the relative merits of this microwave amplifier a figure of merit parameter (FOM) is defined by the equation…”

Section: Power Penaltymentioning

confidence: 99%

“…To introduce wideband characteristics to this component, designers are always looking for raising the operating bandwidth of a receiver front-end and reducing its overall power requirements [8]. In this regard, K and K band frequencies (12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25)(26)(27) are deemed suitable for a microwave low noise amplifier for reliable high-speed short-distance transmission.…”

Section: Introductionmentioning

confidence: 99%

“…To meet these objectives, the research community is focusing on alternative technologies to silicon processes like silicon germanium (SiGe) and silicon on insulator (SOI), pushing up the manufacturing cost and making it difficult for the production assemblies to be economically efficient. Multistage topologies and transmission lines (TL) are integrated to enhance system performance in these technologies, increasing power demand or chip size and creating drawbacks for on-chip wireless standards [11][12][13]. A power-efficient CMOS microwave amplifier can contribute in avoiding these problems.…”

Section: Introductionmentioning

confidence: 99%

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A power efficient bandwidth regulation technique for a low-noise high-gain RF wideband amplifier

Roy

Rashid

2012

Open Engineering

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In this paper, a single-stage deep sub-micron wideband amplifier (LNA) using a reactive resonance tank and passive port-matching techniques is demonstrated operating in the microwave frequency range (K band). A novel power-efficient bandwidth (BW) regulation technique is proposed by incorporating a small impedance in the resonance tank of the amplifier configuration. It manifests a forward gain in the range of 5.9-10.7 dB covering a message bandwidth of 10.6-6.3 GHz. With regulation, input-output reflection parameters (S 11 , S 22 ) and noise figure can be manipulated by -12.7 dB, -22.7 dB and 0.36 dB, respectively. Symmetric regulation is achieved for bandwidth and small signal gain with respect to moderate tank impedance (36.5% and -26.8%, respectively) but the effect on noise contribution remains relatively low (increase of 7% from a base value of 2.39 dB). The regulated architecture, when analyzed with 90 nm silicon CMOS process, supports low power (9.1 mW) on-chip communication. The circuit is tested with a number of combinations for tank (drain) impedance to verify the efficiency of the proposed technique and achieves better figures of merit when compared with published literature.

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“…So far, many high-frequency RF-CMOS LNAs have been proposed [3][4][5][6][7]. Among them, the proposed LNA structure at 17 and 24 GHz [3] uses microstrip line to realize accurate sourcedegeneration inductor.…”

Section: Introductionmentioning

confidence: 99%

A 1-V RF-CMOS LNA design utilizing the technique of capacitive feedback matching network

Shahroury

2009

Integration

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90 nm CMOS MMIC amplifier

Cited by 44 publications

References 8 publications

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

A power efficient bandwidth regulation technique for a low-noise high-gain RF wideband amplifier

A 1-V RF-CMOS LNA design utilizing the technique of capacitive feedback matching network

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