915nm high-power broad area laser diodes with ultra-small optical confinement based on Asymmetric Decoupled Confinement Heterostructure (ADCH)

Yamagata, Yuriko; Yamada, Y.; Muto, Masanori; Sato, S.; Nogawa, Ryozaburo; Sakamoto, Akira; Yamaguchi, Masayuki

doi:10.1117/12.2078698

Cited by 18 publications

(14 citation statements)

References 9 publications

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“…Structures with a broadened asymmetric waveguide and with an active region located very near to the p-cladding were implemented in AlGaAs/GaAs and AlGaAs/GaAs/InGaAs lasers operating at λ <∼ 1 μm [14]- [18] in both gain switched [14] and steady state [15]- [18] regimes. Structures of this type (termed by the authors Extreme Double [15], [17], or Triple- [18] Asymmetry Structures, or Asymmetric Decoupled Confinement Heterostructure [16]) showed increased radiation power and reduced series and thermal resistances compared to a typical structure with the active layer near the middle of the OCL.…”

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confidence: 99%

High Power $1.5\mu$ m Pulsed Laser Diode With Asymmetric Waveguide and Active Layer Nearp-cladding

Hallman

Ryvkin

Avrutin

et al. 2019

IEEE Photon. Technol. Lett.

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We report first experimental results on a highpower pulsed semiconductor laser operating in the eye-safe spectral range (wavelength around 1.5 µm) with an asymmetric waveguide structure. The laser has a bulk active layer positioned very close to the p-cladding in order to eliminate current-induced nonuniform carrier accumulation in the p-side of the waveguide and the associated carrier losses. Moderate doping of the n-side of the waveguide is used to strongly suppress nonuniform carrier accumulation within this part of the waveguide. Highly p-doped InP p-cladding facilitates low series resistance. An as-cleaved sample with a stripe width of 90 µm exhibits an output power of about 18 W at a pumping current amplitude of 80 A. Theoretical calculations, validated by comparison to experiment, suggest that the performance of lasers of this type can be improved further by optimization of the waveguide thickness and doping as well as improvement of injection efficiency.

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confidence: 99%

High Power $1.5\mu$ m Pulsed Laser Diode With Asymmetric Waveguide and Active Layer Nearp-cladding

Hallman

Ryvkin

Avrutin

et al. 2019

IEEE Photon. Technol. Lett.

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“…width and 4 mm cavity length was reported to reach a power conversion efficiency of 60% at 12W CW power under room temperature conditions [8]. An ETAS-based 100 μm-width BAL with optimized confinement factor delivered an efficiency of 63% at 14 W [9].…”

Section: Introductionmentioning

confidence: 99%

Extreme Double/Triple Asymmetric Epitaxial Structure Based Diode Lasers for High Powers and High Efficiencies

et al. 2022

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In edge-emitting high power laser diodes, the longitudinal spatial hole burning (LSHB) effect induced by the inhomogeneous photon and carrier distributions and the non-linear process, two-photon absorption (TPA), are demonstrated to the key causes of power saturation at the high injection level even in the absence of thermal roll-over. Laser diodes based on extreme, double/triple asymmetric (EDAS/ETAS) epitaxial structures show great potentials in high-power and high-efficiency applications owing to the reduced series resistance, low optical loss, and suppressed power saturation. In this paper, a novel semi-analytical calculation method is proposed to systematically analyze the impact of LSHB and TPA effects on the output characteristics of EDAS/ETAS-based broad area lasers (BALs). By leveraging the feature that it is flexible to adjust the confinement factor of ETAS epitaxial structure without compromising the internal loss and resistance level, the laser parameters are first optimized to minimize power saturation of ETAS-based BALs under pulsed and Continuous Wave (CW) operation.

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“…The second low-loss laser waveguide design type, proposed and realised more recently by a number of authors, e.g. [2], [10] [11] [12], builds partly on the earlier ideas of [13] and involves a substantially asymmetric waveguide with a refractive index step between the n-cladding and the OCL substantially smaller than that between the OCL and the p-cladding. Depending on the OCL thickness and the exact value of the refractive index steps, such a waveguide can be broad (in the sense that most of the optical power of the mode is localized in the OCL) or narrow (in the sense that most of the mode resides in the n-cladding [14]), but in either case the overlap with the pcladding is kept low, ensuring low cladding-related optical loss.…”

Section: Introductionmentioning

confidence: 99%

Theory of direct and indirect effect of two-photon absorption on nonlinear optical losses in high power semiconductor lasers

Avrutin

Ryvkin

2016

Semicond. Sci. Technol.

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The effect of the transverse laser structure on two-photon absorption (TPA) related effects in high-power diode lasers is analysed theoretically. The direct effect of TPA is found to depend significantly on the transverse waveguide structure, and predicted to be weaker in broad and asymmetric waveguide designs. The indirect effect of TPA, via carrier generation in the waveguide and free-carrier absorption, is analysed for the case of a symmetric laser waveguide and shown to be strongly dependent on the active layer position. With the active layer near the mode peak, the indirect effect is weaker than the direct effect due to the population of TPAcreated carriers being efficiently depleted by their diffusion and capture into the active layer, whereas for the active layer position strongly shifted towards the p-cladding, the indirect effect can become the dominant power limitation at very high currents. It is shown that for optimizing a laser design for pulsed high power operation, both TPA related effects and the inhomogeneous carrier accumulation in the waveguide caused by diffusive current need to be taken into account.

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915nm high-power broad area laser diodes with ultra-small optical confinement based on Asymmetric Decoupled Confinement Heterostructure (ADCH)

Cited by 18 publications

References 9 publications

High Power $1.5\mu$ m Pulsed Laser Diode With Asymmetric Waveguide and Active Layer Nearp-cladding

High Power $1.5\mu$ m Pulsed Laser Diode With Asymmetric Waveguide and Active Layer Nearp-cladding

Extreme Double/Triple Asymmetric Epitaxial Structure Based Diode Lasers for High Powers and High Efficiencies

Theory of direct and indirect effect of two-photon absorption on nonlinear optical losses in high power semiconductor lasers

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