940-nm Broad Area Diode Lasers Optimized for High Pulse-Power Fiber Coupled Applications

Platz, R.; Eppich, B.; Crump, P.; Pittroff, W.; Knigge, S.; Maaßdorf, A.; Erbert, G.

doi:10.1109/lpt.2014.2301881

Cited by 9 publications

(4 citation statements)

References 8 publications

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“…At present, there exists demand for energy-efficient and compact sources of high-power laser pulses with amplitude exceeding 10 W and width shorter than 100 ns. A commonly accepted approach to generation of pulses of this kind is by using semiconductor lasers pumped by an external generator of current pulses [1][2][3][4][5][6][7][8]. Use of an external source of pulses with amplitude of tens of amperes is associated with larger overall dimensions and cost of a finished article.…”

Section: Introductionmentioning

confidence: 99%

Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm)

Gavrina¹,

Podoskin²,

Romanovich³

et al. 2019

Semicond. Sci. Technol.

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The turn-on dynamics and energy efficiency of control over low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors emitting at a wavelength of 905 nm have been experimentally studied in various control modes: (i) optical activation of the p-GaAs base with external light at a wavelength of 1068 nm and (ii) standard mode of control with pulsed current. It was shown that the turn-on of low-voltage lasers-thyristors by long-wavelength light with photon energy lower than the energy gap width of the p-GaAs base occurs via activation of deep levels. It was demonstrated that, for low-voltage lasers-thyristors with maximum blocking voltage of up to 12 V, the turn-on delay times under optical and electrical activation fall in the range 50-1200 ns. Under optical control by external source at a wavelength of 1068 nm, amplitude of optical power introduced into the p-GaAs base reached a value of 300 mW, and the energy absorbed in the p-GaAs base during the control pulse was 30-40 fJ. In the case of the electrical control, the control current density was as high as 20 A cm −2 , and the energy absorbed in the p-GaAs base during the control pulse was 43-47 pJ.

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Section: Introductionmentioning

confidence: 99%

Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm)

Gavrina¹,

Podoskin²,

Romanovich³

et al. 2019

Semicond. Sci. Technol.

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“…Powering electronic devices over optical fibre (Power-over Fiber; PoF) provide a great number of advantages such as: low attenuation, electro-magnetic immunity or high galvanic isolation. Typically, a PoF is designed to work in a range of 790-980 nm [4,5]. However, this range is not supported in long-distance/core optical networks and optical Local Area Networks (LAN) called Fiber To The Home (FTTH) or Fiber To The Desk (FTTD) networks.…”

Section: Introductionmentioning

confidence: 99%

Metrology and Measurement Systems

Guzowski

Gozdur

Lakomski

2018

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Monitoring and controlling the position of fibre optics connectors is a very important issue. Both autonomy and remote control of such a system are very desired and therefore energy independence must be provided. In this paper the design of an optical power supply system is given. A new idea of using the WDM technique in a power supply block is investigated. The electric power provided by a photovoltaic power converter and by a boost converter is shown. Moreover, in this paper the complete examination of efficiency of the system with different illuminations is given. The maximal output power of the system is 24.02 mW and the time required to identify a single fibre connector is t CYCLE = 0.65 s.

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“…Based on a novel approach using tailored single emitters with wide lateral aperture [7][8][9][10] , we present a QCW fiber coupled pump module with operating wavelength λ = 940 nm and ∼6 kW output power allowing efficient operation at duty cycles 10%-20% (τ = 1 ms). The module has been designed for use with a high average power Yb:YAG thin disk laser system at the Max Born Institute (MBI) [4] , that produces picosecond pulses with multi-joule energies at repetition rates up to 200 Hz.…”

Section: Introductionmentioning

confidence: 99%

High duty cycle, highly efficient fiber coupled 940-nm pump module for high-energy solid-state lasers

Platz

Eppich

Rieprich

et al. 2016

High Pow Laser Sci Eng

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Tailored diode laser single emitters with long (6 mm) resonators and wide (1.2 mm) emission apertures that operate with 940 nm emission wavelength were assembled in novel edge-cooled vertically stacked arrays, and used to construct a compact and highly efficient fiber coupled pump source for Yb:YAG pulsed high-energy class solid-state lasers. The novel configuration is shown to allow repetition rates of 200 Hz at 1 ms pulse duration, at an output power of 130 W per single emitter. The emission of two stacked arrays was then optically combined to realize pump modules that deliver 6 kW peak power (pulse energy 6 J) from a 1.9 mm core diameter fiber, with wall plug efficiency of 50%. This represents a significant improvement in terms of duty cycle and electro-optical efficiency over conventional sources. The pump module has been successfully tested at the Max Born Institute, Berlin during trials for pumping of disk lasers.

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940-nm Broad Area Diode Lasers Optimized for High Pulse-Power Fiber Coupled Applications

Cited by 9 publications

References 8 publications

Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm)

Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm)

Metrology and Measurement Systems

High duty cycle, highly efficient fiber coupled 940-nm pump module for high-energy solid-state lasers

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