980-nm all-fiber mode-locked Yb-doped phosphate fiber oscillator based on semiconductor saturable absorber mirror and its amplifier

Abstract

A 980-nm semiconductor saturable absorber mirror (SESAM) mode-locked Yb-doped phosphate fiber laser is demonstrated by using an all-fiber linear cavity configuration. Two different kinds of cavity lengths are introduced into the oscillator to obtain a robust and stable mode-locked seed source. When the cavity length is chosen to be 6 m, the oscillator generates an average output power of 3.5 mW and a pulse width of 76.27 ps with a repetition rate of 17.08 MHz. As the cavity length is optimized to short, 4.4-mW maximum output power and 61.15-ps pulse width are produced at a repetition rate of 20.96 MHz. The output spectrum is centered at 980 nm with a narrow spectral bandwidth of 0.13 nm. In the experiment, no undesired amplified spontaneous emission (ASE) nor harmful oscillation around 1030 nm is observed. Moreover, through a two-stage all-fiber-integrated amplifier, an output power of 740 mW is generated with a pulse width of 200 ps.

Mode-locked fiber laser operating in the C and L bands with immobilized molybdenum disulfide saturable absorber over etched SMF

“…Saturable absorber (SA) is a critical component of mode-locked operation in ber lasers [4][5][6]. Various types of SAs have been used in passively mode-locked ber lasers in the past.…”

Passively mode-locked Yb-doped all-fiber oscillator using self-made strain-compensated semiconductor mirrors as saturable absorbers

“…Ultrashort pulsed mode-locked fiber lasers have superior advantages and have played an important role in various fields, such as industrial processing, optical communications, and military medicine [1][2][3][4][5]. Up to now, a semiconductor saturable absorber mirror (SESAM) has generally been utilized as the key element in a mode-locked fiber laser and has been commercialized as a standard saturable absorber (SA) [6][7][8][9][10]. However, mode-locked lasers with commercialized SESAMs sometimes suffer damage due to the high power requirements in the experiments.…”

Generation of passively Q‐switched ytterbium laser by using tungsten tri‐oxide film absorber

“…Various SA materials have been proposed and utilised in recent years to generate Q‐switched and mode‐locked lasers such as carbon nanotubes (CNTs) [13], topological insulators (TIs) [14, 15], semiconductor SA mirrors (SESAMs) [16], graphene [17, 18], transition metal dichalcogenides (TMDs) [19–21], black phosphorus (BP) [22], and metal chalcogenide semiconductors (MCSs) [23, 24]. The tube size of CNTs used to construct the SA influences its absorption efficiency and its operating bandwidth.…”