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Krasnov, A. N.; Hofstra, Peter G.; Bajcar, Robert C.

doi:10.1023/a:1006679003632

Journal of Materials Science Letters

1998

DOI: 10.1023/a:1006679003632

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A. N. Krasnov¹,

Peter G. Hofstra²,

Robert C. Bajcar³

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“…3-5 Y 2 O 3 and Ta 2 O 5 layers combined with SiON and Si 3 N 4 layers to prevent ion and moisture penetration were also studied in an attempt to improve luminance properties. 6,7 In a Ce-doped TiO 2 that has a high dielectric constant, the breakdown field can not exceed 0.2 MV/cm, the leakage current level is quite high and the thickness of the top insulator should be relatively thick, as high as 270 nm. 8 To achieve a high breakdown strength of insulating layers, Al 2 O 3 and Al 2 O 3 combined with TiO 2 ͑ATO͒ were examined as insulators in ACTFEL devices.…”

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Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices

Lim

Yun

2004

Electrochem. Solid-State Lett.

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The use of TiON films by plasma-enhanced atomic layer deposition as insulators in thin film electroluminescent ͑TFEL͒ devices was examined and compared with that of TiO 2 by ALD. A ZnS:Mn TFEL device using AlON-TiON stacked insulator ͑ATON͒ exhibited the figure of merit of 12 C/cm 2 . The luminance of the TFEL device with an ATON insulator was twice as high as that with a conventional Al 2 O 3 insulator. This high performance can be attributed not only to high dielectric constant of the ATON film, but the improved quality of the interface of the phosphor and insulator, as well.In alternating-current thin film electroluminescent ͑ACTFEL͒ devices, the choice of insulators is crucial for achieving a stable and efficient operation of a device. The most important role of the insulator is to protect the phosphor layer from electric breakdown in the electric field of more than 2 MV/cm. Thus, an insulator with a high breakdown strength prevents catastrophic device breakdown. On the other hand, a larger insulator capacitance induces a higher electric field across the phosphor layer, a more effective acceleration of the injected electrons as well as a lower operating voltage.The quality of insulators in ACTFEL devices can be estimated by the figure of merit, which is defined, as the product of the dielectric constant and the breakdown electric field, and well characterize dielectric materials. 1-3 Hence an insulator with two contradictory conditions of a high dielectric constant and a high electric breakdown field strength would be desirable. Unfortunately, insulators with a high breakdown field tend to have low breakdown field strengths. In spite of this fact, various high materials have been attempted as the insulators in ACTFEL devices to enhance the device performance.Although SiO 2 and SiON insulators were used as the insulators in the TFEL, their relative dielectric constants are as low ͑4-6͒. Thus, alternative dielectrics for SiO 2 and SiON with high dielectric constants have been explored. BaTiO 3 films were examined as insulators in EL devices, and sometimes an SiON interlayer is inserted between the BaTiO 3 layers to lower the leakage current. 3-5 Y 2 O 3 and Ta 2 O 5 layers combined with SiON and Si 3 N 4 layers to prevent ion and moisture penetration were also studied in an attempt to improve luminance properties. 6,7 In a Ce-doped TiO 2 that has a high dielectric constant, the breakdown field can not exceed 0.2 MV/cm, the leakage current level is quite high and the thickness of the top insulator should be relatively thick, as high as 270 nm. 8 To achieve a high breakdown strength of insulating layers, Al 2 O 3 and Al 2 O 3 combined with TiO 2 ͑ATO͒ were examined as insulators in ACTFEL devices. In particular, an Al 2 O 3 grown by an atomic layer deposition ͑ALD͒ method exhibits the maximum figure of merit of the order of 6 C/cm 2 . 1 The present authors reported that the dielectric breakdown strength of the AlON film grown by plasma enhanced ALD ͑PEALD͒ with a nitrogen plasma was about 9.2 MV/cm, resulting in ...

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mentioning

confidence: 99%

Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices

Lim

Yun

2004

Electrochem. Solid-State Lett.

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Selection of dielectrics for alternating-current thin-film electroluminescent device

Krasnov¹

1999

Thin Solid Films

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Untitled

Cited by 2 publications

References 5 publications

Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices

Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices

Selection of dielectrics for alternating-current thin-film electroluminescent device

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