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Lee, M.

doi:10.1016/j.injury.2004.10.010

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2021

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“…One promising material is germanium (Ge), which * Author to whom any correspondence should be addressed. has a higher electron-hole mobility than intrinsic silicon, and has been introduced into the channel of traditional MOSFETs for novel complementary MOS device applications [1][2][3]. Moreover, it has been demonstrated that the Ge channel can improve the reliability during negative-bias temperature instability because of the reduced generation of interface states [4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Abnormal hump in low temperature in SiGe devices with silicon capping insertion layer

Huang¹,

Chen²,

Lin³

et al. 2021

J. Phys. D: Appl. Phys.

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This study compares the capacitance-voltage (C-V) characteristics in silicon-germanium (SiGe) metal-oxide-semiconductor capacitances with and without a silicon oxide capping layer. The SiGe channel with the silicon oxide capping layer exhibits an improved C-V property at room temperature but has an abnormal shift and depression at low temperature (77 K). We determined that the threshold voltage shift was induced by the Fermi-level when ambient temperature was changed. The additional silicon capping layer was responsible for introducing defects resulting in depression and hump in the C-V measurements. Such a phenomenon is mainly caused by the different distribution of defects, which was established by modifying the alternating current pulse amplitude during the C-V measurement.

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