2018
DOI: 10.5121/ijoe.2018.7100
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Abstract: In this paper we introduce an approach to increase density of field-effect transistors framework a CMOS power amplifier. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostr… Show more

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