“…In a series of computations 4–9, 12–14, 20, we studied the geometric and electronic properties of silicon clusters doped with noble and TM atoms (Cu, Sc, Cr, Mo, W, and Ir). In a recent contribution 20, we studied the geometric, energetic, and bonding properties of ScSi n ( n = 1–6) clusters at the B3LYP/6‐311+G( d ) level and compared the behaviors of these systems with those of CuSi n 4–7 and TMSi n (TM = Cr, Mo, W) clusters 8–10.…”