Untitled

Abstract

The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro-and nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxide, SiO 2-Si interface and SiO 2-Si nanocrystal ones and thin layers of silicon; atomic hydrogen influence on the annealing of vacancy defects and the implanted impurity activation in a subsurface implanted silicon layer; and the hydrogen plasma effect on luminescent properties of nanostructured light emitting materials.