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A Novel Organosilicon Source for Low Temperature Plasma Deposition of Silicon Nitride‐like Thin Films

“…A N‐to‐Si ratio of 0.74 is obtained at 700 W. XPS peak position, after charging correction, has been found almost constant at 398.9 eV for N1s, while for Si2p a shift from 102.0 eV (150 W) to 102.8 eV (700 W), consistent with a more nitrogen rich chemical surrounding, has been detected. A certain amount of oxygen (8–12%) has been always detected and it is believed to be due to moisture or oxygen uptake during air exposition after the deposition or released from the reactor walls during the process, as it is usually reported also for other plasma processes, as well as for the deposition of thermal silicon nitride films 2,6,12,17. Moreover, an oxygen contamination coming from BDMADMS precursor, which was not previously purified by distillation, may not be ruled out.…”

“…In Figure 3 the FT‐IR absorption spectrum of BDMADMS in the gas phase (a) is compared with those of films deposited at 300 W with different gas feeds: 100% BDMADMS (b), He‐BDMADMS (c), and Ar‐BDMADMS (d). The details of the bands detected (assignments and positions) are presented in Table 1 11–20,22,23. It can be observed that the coating obtained in pure monomer is highly organic since strong absorption of CH x and Si(CH 3 ) x features are present.…”

“…So far, many organosilicons have been tested as feed sources in PECVD of silicon nitride. Nevertheless, from an extended survey of published results, it seems that high quality films, that is with low hydrogen and negligible organic carbon content, are very difficult to be obtained 11–21…”

“…Dimethylbis(2,2‐dimethylhydrazil)silane, an organosilicon compound with a high N‐to‐Si ratio, has also been investigated, in mixture with H 2 and He, for nitride plasma deposition; a substrate temperature higher than 400 °C was necessary to obtain inorganic silicon nitride films 12…”

Enhanced Nucleation and Growth of Diamond Film on Si by CVD Using a Chemical Precursor

“…The peak is approximately at 284.5 eV, which is the typical characteristics of graphite sp 2 bonding. 30,31 The signal at 284.5 eV shows the presence of the graphite phase, while 287.6 eV is from carbonyl or CÀO groups. 29 The XPS carbon signal at 289.1 eV also corresponds to carbonyl or CÀO groups.…”