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Meteleva, Yu. V.; Семенов, В. Н.; Klyuev, V. G.; Smerek, S. A.

doi:10.1023/a:1012909621867

Cited by 7 publications

(5 citation statements)

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“…18 The deposition of the solutions by CBD was carried out at 85 C and the annealing of these samples was carried out in both air and nitrogen atmospheres, and in the temperature range of 100 to 400 C for 30 min. 15 The films synthesized using the pyrolysis of the aerosols of the aqueous solutions of TCC were deposited at 300 C and annealed at 250 and 350 C for 30 min.…”

Section: Methodsmentioning

confidence: 99%

“…15 The films synthesized using the pyrolysis of the aerosols of the aqueous solutions of TCC were deposited at 300 C and annealed at 250 and 350 C for 30 min. 18 The kinetics of the electron trapping processes was measured by the TRMC method 19 at room temperature in a 9 GHz band with the time resolution of 50 ns. This frequency band was selected to detect both the fast and the slow components of photoresponse up to 2 ls.…”

Section: Methodsmentioning

confidence: 99%

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Effect of annealing on the loss kinetics of charge carriers in CdS films

Rabenok

Гапанович

Bocharova

et al. 2013

Journal of Renewable and Sustainable Energy

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Flow rate effect on surface morphology of Cu doped CdS thin film by spray pyrolysis technique AIP Conf. Swift heavy ion induced structural changes in CdS thin films possessing different microstructures: A comparative studyThe influence of the annealing treatment on the kinetics of the electron trapping processes in CdS thin films has been investigated using the contactless time-resolved microwave photoconductivity technique (TRMC) in 9 GHz band. The thin (<200 nm) CdS films were synthesized using two techniques: by the chemical deposition from the solution (CBD method) and by the pyrolysis of the aerosols of the aqueous solutions of the thiourea coordination compounds of cadmium (Cd(thio) 2 Cl 2 ) on a heated substrate. Annealing in both the air and the nitrogen atmospheres resulted in an increase of the amplitude and characteristic decay time of the photoresponse. Two particular effects caused by the annealing treatments were observed: the structural improvement and the energy redistribution of the electron traps. V C 2013 American Institute of Physics. [http://dx.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Effect of annealing on the loss kinetics of charge carriers in CdS films

Rabenok

Гапанович

Bocharova

et al. 2013

Journal of Renewable and Sustainable Energy

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“…In [4], films of compositions Cd 0.3 Zn 0.7 S and Cd 0.5 Zn 0.5 S were investigated. A considerable instability of these samples against the action of UV radiation was observed, with the kinetics of a change in the luminescence intensity depending on the intensity of UV radiation as well as on the temperature of film sputtering.…”

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confidence: 99%

“…It may quite be that, by analogy with the 785-nm band of type I, the luminescence band Γ (765-795 nm, "halogenous") of cadmium sulfide films produced using the coordination compound [Cd(N 2 H 4 CS) 4 Br 2 ] (II) is caused by the defects of the type [V Cd 2− Br S + ] -. It is known that with increase in the sputtering temperature, the percentage of halogen atoms [1], Br in this case, decreases.…”

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confidence: 99%

Luminescence and Electrical Properties of CdS Films Doped with Potassium and Sodium

et al. 2005

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CdS films, both pure and doped with the alkali metals Na and K, with Cl and without it, obtained by the aerosol pyrolysis method from thiourea coordination compounds at a temperature of 250 to 500 o C are investigated. The photoluminescence spectra and the dependence of the luminescence intensity on the duration of exposure of samples to a high-power UV radiation have been obtained. The doping of samples results in a tenfold increase in the intensity of the luminescence band in the visible spectrum range (650-850 nm) as compared to pure samples of CdS. Upon irradiation of samples by high-power UV radiation for 1 h, no noticeable change in the intensity of luminescence of CdS films was observed. This is indicative of the stability of the films under study against the action of UV radiation. The luminescent properties of the films, obtained pyrolytically using thiourea coordination complexes, are determined by the synthesis conditions as well as by the chemical nature of the original substances.Introduction. Semiconductor compounds based on metal sulfides occupy an important place in contemporary engineering. This is due to a variety of electrical, photoelectrical, and optical properties of the given class of compounds. One such compound is cadmium sulfide, which is widely used for manufacturing photoelectric, recording, and regulating devices.Advances in contemporary materials science are closely related with the progress made in the technology of thin films. It is known that the production technique has a profound effect on the film characteristics. Therefore, at present, of great importance are the development and improvement of the techniques of synthesis of metal sulfide films that allow one to produce materials with controllable properties. Among these techniques is the method of spraying solutions of thiourea coordination compounds (TCC) onto a heated substrate [1]. The promise of practical application of this method lies in the simplicity of producing metal sulfide films of mixed composition at fairly low temperatures and the possibility of implanting active impurities into films immediately in the process of obtaining and creating complex heterostructures, which permits one to extend the range of application of the useful properties of these semiconductor materials.The investigations carried out earlier [1] made it possible to formulate conditions for obtaining sufficiently pure metal sulfide layers, solid solutions, and heterostructures based on them.For contemporary optoelectronics, of special interest are thin-film compounds possessing diverse luminescent characteristics.It is known that single and microcrystals of CdS are distinguished for good luminescence in the visible spectral region [2], with undoped cadmium sulfide samples possessing the green "edge" (+520 nm) and red (+730 nm) luminescence bands. In the longwave spectral region there is an IR band (+1000 nm). Moreover, high photosensitivity of CdS films is noted. It was Boer and Borchardt [3] who already revealed and studied the photofatigue (a ...

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“…The luminescence spectra of AgCl microcrystals obtained in different regimes have been analyzed with the aid of the "Spectral analyzer" program [4], which allows one to resolve the complex spectral band into elementary components that have a Gaussian shape. The results of this resolution allow the conclusion that the presented luminescence spectra have a complex structure and contain radiation bands of several luminescence centers.…”

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confidence: 99%

Luminescence of silver chloride microcrystals upon photoexcitation by different methods

2005

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The luminescence spectra of AgCl microcrystals were measured in two different regimes: in the regime of excitation of stationary luminescence and in the regime of photostimulated burst of luminescence. Differences between the spectra of stationary luminescence and the spectra of photostimulated-luminescence burst in the range between 430 and 590 nm have been found. The luminescence spectra are complex; the ratio of intensities for elementary components changes with the technique of excitation. Differences in the form and composition of complex luminescence bands obtained under different conditions of registration are attributed to the recombination interaction of the luminescence centers. It is shown that analysis of the dependences of intensity ratios for the elementary components of a complex luminescence band on the exciting-radiation intensity allows one to evaluate the mechanism of recombination in elementary bands provided that the mechanism is known for at least one luminescence band.Keywords: luminescence, recombination centers, burst of luminescence, mechanism of recombination, center of localization of electrons.Introduction. In studying the luminescent properties of silver chloride by the method of photostimulated burst of luminescence (PSBL), a difference was observed between the luminescence spectra measured in the regime of stationary excitation and the luminescence spectra measured in the regime of stimulation of a burst of luminescence within the range from 430 to 590 nm at a temperature of 77 K [1]. These differences in the luminescence bands were not studied in detail and were only mentioned as being observed. It should be noted that the main quantity measured experimentally in the PSBL method is the so-called light sum of the burst of luminescence, which is proportional to the number of charge carriers that recombined in the process of irradiation by more longwave (IR) radiation from the crystal previously excited by more shortwave (UV) radiation [2]. In the luminescent methods usually used, the structure of luminescence centers and the mechanisms of recombination in them are usually judged from the spectra of stationary luminescence [3]. The dependence of the shape of the luminescence spectra on the technique of excitation and stimulation indicates that the classical luminescence spectra must not be interpreted unequivocally, because the shape of the luminescence spectra depends on many factors such as the probability of capturing nonequilibrium charge carriers at the luminescence impurity centers, the probability of the recombination of charges at these centers, the probability of the release of the charge carriers from luminescence centers, and the method of registration. It is important also to take into account the recombination interaction of different kinds of luminescence centers that are influenced by the above-listed parameters.Experimental. The luminescence spectra of silver chloride microcrystals were measured within the range of wavelengths from 430 to 590 nm at a temperature of 77...

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Cited by 7 publications

References 1 publication

Effect of annealing on the loss kinetics of charge carriers in CdS films

Effect of annealing on the loss kinetics of charge carriers in CdS films

Luminescence and Electrical Properties of CdS Films Doped with Potassium and Sodium

Luminescence of silver chloride microcrystals upon photoexcitation by different methods

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