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Chavez, Hugo; Jordan, Matthew S.L.; McClure, Joshua P.; Lush, G.B.; Singh, Virendra

doi:10.1023/a:1018537928315

Cited by 37 publications

(8 citation statements)

References 7 publications

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“…The donor density of the as-deposited sample is comparable to the values reported in the literature for CdS films deposited with CBD under similar conditions. 23,35,36 The donor density of the vacuumannealed sample is an order of magnitude higher due to the loss of sulfur [cf. Eq.…”

Section: A Cmentioning

confidence: 99%

Titanium nitride: A new Ohmic contact material for n-type CdS

Didden¹,

Battjes²,

Machunze³

et al. 2011

Journal of Applied Physics

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In devices based on CdS, indium is often used to make Ohmic contacts. Since indium is scarce and expensive, suitable replacement materials need to be found. In this work, we show that sputtered titanium nitride forms an Ohmic contact with n-type CdS. The CdS films, deposited with chemical bath deposition, have a hexagonal crystal structure and are polycrystalline, mostly with a (002) texture. The thickness of the films is $600 nm, and the donor density is 1.9 Â 10 16 cm À3. The donor density increases to 1.5 Â 10 17 cm À3 upon annealing. The contact resistivity of sputtered TiN on CdS is found to be 4.7 6 0.6 X cm 2 . This value is sufficiently small to avoid large resistive losses in most CdS device applications. To demonstrate the use of TiN in a CdS device, a Au/CdS/ TiN Schottky diode was constructed. The diode has a potential barrier of 0.69 V and an ideality factor of 2.2.

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Section: A Cmentioning

confidence: 99%

Titanium nitride: A new Ohmic contact material for n-type CdS

Didden¹,

Battjes²,

Machunze³

et al. 2011

Journal of Applied Physics

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“…The electrical and optical properties make it extremely useful as window layer material for many photovoltaic solar cell modules [4][5][6][7]. Furthermore CdS has remained a focus of the material science community due to its important band gap, conversion efficiency, high absorption coefficient, stability and last but not the least its significantly low cost [8].…”

Section: Introductionmentioning

confidence: 99%

Physical properties and characterization of Ag doped CdS thin films

Shah

Nazir²,

Mahmood

et al. 2012

Journal of Alloys and Compounds

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“…J-V characteristics of 100 nm CdS film diodes on 100 nm SnO 2 demonstrate resistor-like behavior, where J is nearly linearly dependent on voltage. The resistor-like behavior of CdS film/Au has been reported where CdS films were fabricated by chemical bath deposition and have 50 and 105 nm [25]. Analysis its J-V data yielded series resistance of 0.48 Ω cm −2 and 0.3 Ω cm −2 respectively, and shunt resistance of 0.4 Ω and 0.2 Ω cm −2 in the light and dark irrespectively.…”

Section: Resultsmentioning

confidence: 69%

Comparison of electrical characteristics of Schottky junctions based on CdS nanowires and thin film

Dang¹,

Ososanya²,

Zhang³

2022

Nanotechnology

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CdS nanowires and film Schottky diodes are fabricated and diode properties are compared. Effect of SnO2on CdS film diode properties is investigated. CdS film/ Au on 100nm SnO2 substrate demonstrates like-resistor characteristics and increase in SnO2 thickness corrects resistor behavior, however the effective reverse saturation current density Jo is significantly high and shunt resistance are considerably low, implying that SnO2 slightly prevents impurities migration from CdS films into ITO but cause additional issues. Thickness of CdS film on diode properties is further investigated and increasing CdS film thickness improved Jo by one order of magnitude, however shunt resistance is obviously low, suggestingintrinsic issues inCdS film. 100nm CdS nanowire/Au diodes reduce Jo by three orders of magnitude in the dark and two orders of magnitude in the light respectively and their shunt resistance is significantly enhanced by 70 times when comparing with those of the CdS film diodes. The wide difference can be attributed to the fact that CdS nanowires overcome intrinsic issues in CdS film and thus demonstrate significantly well-defined diode behavior. Simulation found that CdS nanowire diodes have low compensating acceptor type traps and interface state density of 5.0*10 /cm92, indicating that interface recombination isn’t a dominated current transport mechanism in the nanowire diodes. CdS film diodes are simulated with acceptor traps and interface state density increased by two order of magnitude and shunt resistance reduced by one order of magnitude, indicating that high density of interface states and shunt paths occur in the CdS film diodes.

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Untitled

Cited by 37 publications

References 7 publications

Titanium nitride: A new Ohmic contact material for n-type CdS

Titanium nitride: A new Ohmic contact material for n-type CdS

Physical properties and characterization of Ag doped CdS thin films

Comparison of electrical characteristics of Schottky junctions based on CdS nanowires and thin film

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