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Mechanical, Tribological, and Thermal Properties of Hot‐Pressed ZrB2‐B4C Composite

“…Zou et al 12 stated that B 8 C-ZrB 2 ceramics exhibited high hardness of 40.36 GPa and 33.4 GPa at 2.94 N and 9.8 N, respectively. Huang et al 13 stated that SPS sintered B 4 C-ZrB 2 (30 vol%) composite exhibited high hardness (30)(31)(32), fracture toughness (2.4-2.9 MPa.m 1/2 ) and flexural strength (630-730 MPa). Goldstein et al 14 showed that fully dense B 4 C-ZrB 2 composites exhibited vicker's hardness of 30-33 GPa.…”

“…ZrB 2 -B 4 C (10 wt%)), and 57.12-45.23 W/m K (for ZrB 2 -B 4 C (15 wt%)), respectively. It was reported that the thermal conductivity of monolithic ZrB 2 (both polycrystalline and single crystal) and its composites were in the range of 50-140 W/m K [30][31][32]. Thus, for making real life UHTC component, thermal conductivity values of ZrB 2 composites should be tailored in this range.…”

Transparent conductive CuI thin films prepared by pulsed laser deposition

“…Different methods, such as magnetron sputtering 7, pulsed laser deposition (PLD) 3, 4, 8, 9, vacuum evaporation 10, laser‐assisted molecular deposition 11, chemical bath deposition (CBD) 12, successive ionic layer adsorption and reaction (SILAR) 9, 12, 13, and solvent evaporation 2, 9 had been used to prepare CuI thin films. Among these techniques, highly transparent and conductive CuI thin films can be obtained, for example, Tanaka et al 7, 10 obtained CuI films with a resistivity of the order of 10 −2 Ω cm and 60–80% transmittance at wavelength of 550–900 nm by rf–dc coupled magnetron sputtering and vacuum evaporation techniques; Tennakone et al 2 deposited CuI films by solvent evaporation, and a minimum sheet resistance of 25 Ω/cm 2 for a film with a thickness of 10 µm was obtained after optimization of iodine doping, sintering time, and temperature. Compared with these reports, Sirimanne et al reported that CuI thin films produced by a PLD technique exhibited a high resistivity of approximately 2 × 10 3 Ω cm 3, 4, 8, 9.…”