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Arslambekov, V. A.

doi:10.1023/a:1022930507964

Cited by 1 publication

(3 citation statements)

References 2 publications

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“…[32,61] Obviously, the primary difference between our self-assembled WO2. 57 [16,20,62] Considering WO2.57 can form a good ohmic contact with Ti as reported, [19] it was reasonable to observe similar features in our O-WSe2…”

Section: Resultssupporting

confidence: 79%

“…Consequently, the x value in WOx can be determined to be ~ 2.57, which was very close to the reported substoichiometric WO2.6 and further implied high density of oxygen vacancies. [57,58] After determining the components of edge and inner domains, conductive-AFM (c-AFM)…”

Section: Resultsmentioning

confidence: 99%

“…Field-effect transistors based on air-induced self-passivated bilayer WSe2 are reported. Systematic material characterizations validated the formation of WO2 57…”

mentioning

confidence: 82%

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Ambipolar and Robust WSe₂ Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

Han

Liu

et al. 2019

Adv Materials Inter

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Transition metal oxides (TMOs) with high work function (WF) show promising properties as unipolar p-type contacts for transition metal dichalcogenides. Here, ambipolar field-effect transistors (FETs) enabled by bilayer WSe2 with self-assembled TMOs (WO2.57) as contacts are reported. Systematic material characterizations demonstrated the formation of WO2.57/WSe2 heterojunctions around nanoflake edges with Se atoms substituted by O atoms after air-exposure, while pristine properties of WSe2 almost sustained in inner domains. As-fabricated FETs exhibited both polarities, implying WO2.57 with lowered WF at edges can serve as both the p-type and n-type contact for inner WSe2. Noteworthy, greatly reduced contact resistance and enhanced channel current were achieved, compared to the devices without WO2.57 contacts. Linear drain-source current relationship from 77 K to 300 K indicated the ohmic contact between edge WO2.57 and inner WSe2. Density functional theory calculations further revealed the WO2.57/WSe2 heterojunction formed a barrier-less charge distribution. These nm-scale FETs possessed remarkable electrical conductivity up to ~ 2600 S/m, ultra-low leakage current down to ~ 10-12 A, robustness for high voltage operation and air stability, which even outperformed pristine WSe2 FETs. Theoretical calculations revealed the high conductivity was exclusively attributed to the air-induced WO2.57 and its further carrier injection to WSe2.

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Section: Resultssupporting

confidence: 79%

Section: Resultsmentioning

confidence: 99%

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Ambipolar and Robust WSe₂ Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

Han

Liu

et al. 2019

Adv Materials Inter

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Cited by 1 publication

References 2 publications

Ambipolar and Robust WSe₂ Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

Ambipolar and Robust WSe₂ Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

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Untitled

Cited by 1 publication

References 2 publications

Ambipolar and Robust WSe2 Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

Ambipolar and Robust WSe2 Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

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Ambipolar and Robust WSe₂ Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

Ambipolar and Robust WSe₂ Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides