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Michel, S.; Stein, Nicolas; Schneider, Maximilian; Boulanger, Clotilde; Lecuire, J.M.

doi:10.1023/a:1022914615625

Cited by 41 publications

(21 citation statements)

References 8 publications

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“…Michel et al deposited thin fi lms of Bi 2 (Te x Se 1−x ) 3 fi nding the key factor of the deposition to be the electrolyte composition as well as the deposition potential. [ 26 ] Films deposited by Bu et al on Au and stainless steel substrates exhibited strongly preferred orientations in (110) direction. [ 27 , 28 ] However, these works lack the thermoelectric characterization of the deposited fi lms as well.…”

Section: Full Papermentioning

confidence: 99%

Optimizations of Pulsed Plated p and n‐type Bi₂Te₃‐Based Ternary Compounds by Annealing in Different Ambient Atmospheres

Schumacher

Reinsberg

Rostek

et al. 2012

Advanced Energy Materials

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This work presents a comprehensive study of the fabrication and optimization of electrodeposited p‐ and n‐type thermoelectric films. The films are deposited on Au and stainless steel substrates over a wide range of deposition potentials. The influence of the preparative parameters such as the composition of the electrolyte bath and the deposition potential are investigated. Furthermore, the p‐doped (BixSb1‐x)2Te3 and the n‐doped Bi2(TexSe1‐x)3 films are annealed for a period of about 1 h under helium and under tellurium atmosphere at 250 °C for 60h. Annealing in He already leads to significant improvements in the thermoelectric performance. Furthermore, due to the equilibrium conditions during the process, annealing in Te atmosphere leads to a strongly improved film composition, charge carrier density and mobility. The Seebeck coefficients increase to values up to +182 μV K−1 for p‐doped and–130 μV K−1 for n‐doped materials at room temperature. The power factors also exhibit improvements with 1320 μW m−1 K−2 and 820 μW m−1 K−2 for p‐doped and n‐doped films, respectively. Additionally, in‐situ XRD measurements performed during annealing of the films up to 600K under He atmosphere show stepwise improvements of the crystal structure leading to the improvements in thermoelectric parameters. The thermal conductivity is between 1.2 W m−1 K−1 and 1.0 W m−1 K−1.

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Section: Full Papermentioning

confidence: 99%

Optimizations of Pulsed Plated p and n‐type Bi₂Te₃‐Based Ternary Compounds by Annealing in Different Ambient Atmospheres

Schumacher

Reinsberg

Rostek

et al. 2012

Advanced Energy Materials

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“…Moreover ECD allows growing of uniform films with a thickness ranging from the nanoscale to a few millimeters over large areas, on irregular shaped surfaces and compositionally modulated structures or non-equilibrium alloys. Electrodeposition has been successfully applied to the production of bismuth telluride binaries [4][5][6][7][8][9][10] Se-ternary [11], and Sb-ternary [12]. Recently, pulse current plating was investigated [13,14] in order to improve the morphology and properties of bismuth telluride electrodeposits.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Bi₂Te₃Thin Films Grown by Pulse Electroplating

Richoux¹,

Diliberto²,

Stein³

et al. 2007

3rd France-Russia Seminar

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Abstract:The preparation of bismuth telluride deposits has been performed by galvanostatic pulsed electrolysis from nitric solutions on gold layer deposited on glass. The influence of the chemical conditions and pulsed parameters has been investigated on the stoichiometry and on thermoelectric behaviour for deposited and annealed films. The results demonstrated that improvements of the transport properties in bismuth telluride films can be generated by a pulsed electroplating mode. Boikov et al. [3], the lattice thermal conductivity of chalcogenide films is considerably lower than that of bulk crystals of similar compositions, leading to an increase of the figure of merit of films. Furthermore the current tendency towards miniaturization has increased the interest in micro-thermoelectric devices (sensors or generators). Electrochemical deposition (ECD) also opens up opportunities for thin film microsystems since this method is considerably simpler and cheaper than dry processes such as molecular-beam epitaxy, sputtering and metalorganic chemical vapor deposition. Moreover ECD allows growing of uniform films with a thickness ranging from the nanoscale to a few millimeters over large areas, on irregular shaped surfaces and compositionally modulated structures or non-equilibrium alloys. Electrodeposition has been successfully applied to the production of bismuth telluride binaries [4-10] Se-ternary [11], and Sb-ternary [12]. Recently, pulse current plating was investigated [13,14] in order to improve the morphology and properties of bismuth telluride electrodeposits. This process is known to have positive effects on mass transport, electrode kinetics and the nucleation of growth centres. Pulse plating also offers a larger number of parameters (i.e., on-time, off-time, cathodic-and anodic-pulse current density and frequency) than does direct current plating to improve deposit quality [15,16]. The present work concerns the characterization of bismuth telluride films synthesized by pulse electroplating. The evolution of roughness as a function of the stoichiometry was studied. Thermoelectric properties (Seebeck coefficient, resistivity) were measured and correlated to the stoichiometry of the films. Finally, the influence of the annealing on the physical properties was studied. All these results were compared to results obtained by direct electrodeposition in order to identify the influence of pulse electroplating.

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“…Le tellurure de bismuth (Bi 2 Te 3 ) et ses dérivés ternaires (Bi 2 (Te,Se) 3 , (Bi,Sb) 2 Te 3 ) sont considérés comme les meilleurs matériaux en vue d'applications thermoélectriques à température ambiante [1]. Différents protocoles de synthèses électrochimiques ont déjà été proposés conduisant à des films minces de composition et de stoechiométrie précises aux propriétés de transport et électroniques spécifiques [2,3].…”

Section: Introductionunclassified

“…Différents protocoles de synthèses électrochimiques ont déjà été proposés conduisant à des films minces de composition et de stoechiométrie précises aux propriétés de transport et électroniques spécifiques [2,3]. Ce travail s'intègre dans une démarche fondamentale visant à caractériser les films obtenus ainsi qu'à déterminer leurs mécanismes de croissance.…”

Section: Introductionunclassified

Caractérisation par ellipsométrie spectroscopique de films minces de tellurure de bismuth obtenus par voie électrochimique

Zimmer¹,

Stein²,

Boulanger³

et al. 2004

J. Phys. IV France

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Résumé. Des films de tellurure de bismuth (Bi 2 Te 3 ) d'épaisseur proche de 1 m ont été développés par voie électrochimique. Leurs indices optiques ont été déterminés par ellipsométrie spectroscopique (SE). Le domaine spectral des indices optiques s'étend de 400 nm à 1300 nm. L'ellipsométrie spectroscopique à angle d'incidence variable (VASE) a été utilisée pour corréler les données SE. Cette partie a été complétée par des analyses par microscopie à force atomique (AFM) qui ont permis de déterminer la rugosité des films. A partir de ces résultats et en associant l'absorption fondamentale des films de Bi 2 Te 3 à une transition indirecte, l'énergie de bande interdite a été évaluée à 0,3 eV. Par ailleurs des mesures associant ellipsométrie spectroscopique à temps réel et électrochimie ont pu être réalisées. Ainsi les premiers instants de croissance ont été observés.

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Untitled

Cited by 41 publications

References 8 publications

Optimizations of Pulsed Plated p and n‐type Bi₂Te₃‐Based Ternary Compounds by Annealing in Different Ambient Atmospheres

Optimizations of Pulsed Plated p and n‐type Bi₂Te₃‐Based Ternary Compounds by Annealing in Different Ambient Atmospheres

Characterization of Bi₂Te₃Thin Films Grown by Pulse Electroplating

Caractérisation par ellipsométrie spectroscopique de films minces de tellurure de bismuth obtenus par voie électrochimique

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Untitled

Cited by 41 publications

References 8 publications

Optimizations of Pulsed Plated p and n‐type Bi2Te3‐Based Ternary Compounds by Annealing in Different Ambient Atmospheres

Optimizations of Pulsed Plated p and n‐type Bi2Te3‐Based Ternary Compounds by Annealing in Different Ambient Atmospheres

Characterization of Bi2Te3Thin Films Grown by Pulse Electroplating

Caractérisation par ellipsométrie spectroscopique de films minces de tellurure de bismuth obtenus par voie électrochimique

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Optimizations of Pulsed Plated p and n‐type Bi₂Te₃‐Based Ternary Compounds by Annealing in Different Ambient Atmospheres

Optimizations of Pulsed Plated p and n‐type Bi₂Te₃‐Based Ternary Compounds by Annealing in Different Ambient Atmospheres

Characterization of Bi₂Te₃Thin Films Grown by Pulse Electroplating