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Garshin, A. P.; Мохов, Е. Н.; Shvaiko-Shvaikovskii, V. E.

doi:10.1023/a:1027398828505

Cited by 1 publication

(3 citation statements)

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“…Ohmic Al contacts of large area were deposited on the back side of the samples by using electron beam. It should be added, that the formation energy of the carbon antisite is low and it is likely to be the most common native defect in as-grown SiC [1,5] The total concentration of the traps T1A (0.34 eV) and T1B (0.40 eV) decreases with increasing the nitrogen concentration. The nitrogen and boron concentrations in the samples A, B, and C, determined by Secondary Ion Mass Spectroscopy (SIMS), were as follows: 2.1x10 17 and 1.1x10 17 cm -3 , 5x10 17 and 1.2x10 17 cm -3 , 1.8x10 18 and 2.2x10 17 cm -3 , respectively.…”

Section: Methodsmentioning

confidence: 99%

“…Accordingly to technological conditions, various types of point defects are formed in bulk SiC crystals grown by Physical Vapor Transport (PVT) method [1]. However, the quality of SiC single crystals in terms of application in advanced electronics is strongly affected by point defects formed during the crystal growth.…”

Section: Introductionmentioning

confidence: 99%

“…However, the quality of SiC single crystals in terms of application in advanced electronics is strongly affected by point defects formed during the crystal growth. The theoretical analysis has shown that the partial pressure of silicon over the growing crystal plays an important role in the formation of Schottky and Frenkel point defects in SiC single crystals [1]. Thus, the knowledge on the electronic properties of defect centers and their microscopic structure is of great importance to control the material quality.…”

Section: Introductionmentioning

confidence: 99%

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Deep-Level Defects in Nitrogen-Doped 6H-SiC Grown by PVT Method

et al. 2008

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An effect of the nitrogen concentration on the concentrations of deep-level defects in bulk 6H-SiC single crystals is investigated. Six electron traps labeled as T1A, T1B, T2, T3, T4 and T5 with activation energies of 0.34, 0.40, 0.64, 0.67, 0.69, and 1.53 eV, respectively, were revealed. The traps T1A (0.34 eV) and T1B (0.40 eV), observed in the samples with the nitrogen concentration ranging from ~2x10 17 to 5x10 17 cm -3 , are attributed to complexes formed by carbon vacancies located at various lattice sites and carbon antisites. The concentrations of traps T2 (0.64 eV) and T3 (0.67 eV) have been found to rise from ~5x10 15 to ~1x10 17 cm -3 with increasing the nitrogen concentration from ~2x10 17 to ~2.0x10 18 cm -3 . These traps are assigned to complexes involving silicon vacancies occupying hexagonal and quasi-cubic sites, respectively, and nitrogen atoms. The trap T4 (0.69 eV) concentration also substantially rises with increasing the nitrogen concentration and it is likely to be related to complexes formed by carbon antisites and nitrogen atoms. The midgap trap T5 (1.53 eV) is presumably associated with vanadium contamination. The presented results show that doping with nitrogen involves a significant change in the defect structure of 6H-SiC single crystals.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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