Abstract:In this paper, the influence of electron irradiation on DC and RF characteristics of InP-based HEMTs with different gate widths were studied by irradiation experiment. The results show that the value of channel current (I DS ) and transconductance (g m ) are decreased for device with different gate width after electron irradiation, which is mainly due to the reduction of mobility in the channel by the irradiation-induced defects. However, the carrier concentration in the channel has a little change. Compared w… Show more
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