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Белышева, Т. В.; Kazachkov, E. A.; Gutman, E. E.

doi:10.1023/a:1016756725312

Cited by 21 publications

(1 citation statement)

References 2 publications

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“…Indium(III) oxide is an n -type semiconductor known for its resistive gas sensing properties. It is described as material showing pronounced rise in electrical resistivity toward exposure to small concentrations of oxidizing gases (NO 2 , − O 3 , − NO, SO 2 , Cl 2 2 ) as well as reducing gases (H 2 , CO − , ). Besides doping elements or additives, the crystallinity and thickness of the respective base material including details of the coating preparation, geometry as well as the materials used for the test substrates, aging and preconditioning procedures, and the testing conditions show pronounced influence on the sensitivity determined in a sensor material characterization .…”

Section: Introductionmentioning

confidence: 99%

High-Throughput Gas Sensing Screening of Surface-Doped In₂O₃

Sanders

Simon

2006

J. Comb. Chem.

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The effect of various surface doping elements on the electrical and gas sensing properties of indium(III) oxide thick films sensors was investigated by means of high-throughput impedance spectroscopy (HTIS). Some doping elements lead to changes in both the conductivity in air as well as in the gas sensing properties towards oxidizing (NO(2), NO) and reducing (H(2), CO, propene) gases. Correlations between the sensing and the electrical properties in reference atmosphere indicate that the effect of the doping elements can be ascribed to an influence on the oxidation state of the metal oxide surface rather that to an interaction with the respective testing gases. An equation for the description of the temperature-dependent conductivity in air and nitrogen is proposed to describe the oxidation state of the metal oxide surface taking into account sorption of oxygen. Furthermore, a model associating the sensing properties and the oxidation state of the surface layer of the metal oxide based on oxygen spillover from doping element particles to the metal oxide surface is introduced.

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