2002
DOI: 10.1023/a:1021633917071
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Cited by 40 publications
(20 citation statements)
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“…5, where the intensities of the diffraction peaks are decreased which is in good agreement with the reported result [34]. Microstructures of Ba x Sr 1-x TiO 3 ceramics, with x=1, 0.7, 0.6, and 0.5, were described [37], and the reported results showed an abnormal grain growth obtained with coarse grains of about 50 μm, surrounded by fine grains of about 2 μm. Also, the grain size was increased with increasing of Ba content or, in other words, substitution of Ba by Sr inhibited growth of grains.…”
Section: Attenuation Elastic Modulus and Ultrasonic Velocitysupporting
confidence: 89%
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“…5, where the intensities of the diffraction peaks are decreased which is in good agreement with the reported result [34]. Microstructures of Ba x Sr 1-x TiO 3 ceramics, with x=1, 0.7, 0.6, and 0.5, were described [37], and the reported results showed an abnormal grain growth obtained with coarse grains of about 50 μm, surrounded by fine grains of about 2 μm. Also, the grain size was increased with increasing of Ba content or, in other words, substitution of Ba by Sr inhibited growth of grains.…”
Section: Attenuation Elastic Modulus and Ultrasonic Velocitysupporting
confidence: 89%
“…Whereas, relaxation peaks with energies larger than 1.1 eV were interpreted to diffusion of point defects in ferroelectric phase of these ceramics. Although, comparison between mechanical measurements [21,29] and other dielectric ones [37,39] on BST materials makes it possible to show that these measurements are fully connected; there are some notations which could be summarized in the following manner: i) Dielectric measurements [39] of the real part of permittivity confirmed that the Curie temperature, of investigated BST materials, was frequency-independent in the range 0.1-200 kHz, see Fig. 8 of Ref.…”
Section: Temperature Dependence Of Ultrasonic Attenuationmentioning
confidence: 91%
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“…Additionally, the large stress in nanograin BT ceramics [18] may also play a role in producing high strength. It is believed that one relaxation process exists in all the ferroelectric phase, which demonstrates a memory effect of ferroelectric domain configuration [19], in the mean time local compressional and tensile stresses will take place. …”
Section: Methodsmentioning
confidence: 99%
“…In order to develop a material system with both high piezoelectric performance and high T d , to investigate the mechanisms that leads to a variation of T d according to the crystal structure are still important objects. Ferroelectric (Ba 1−a Sr a )TiO 3 (BST) material is widely used in microelectronic device due to its high dielectric properties and is a good doping compound to improve the dielectric properties of pure BNT [25]. According to the tolerance factor calculation as mentioned above [18], the MPB composition of (1 − x)(Bi 0.5 Na 0.5 )TiO 3 -x(Ba 1−a Sr a )TiO 3 system is corresponding to a tolerance factor of around 0.991 in which the x value shifts from 0.06 to 0.08 as the Sr 2+ content increases from a = 0-0.3.…”
Section: Introductionmentioning
confidence: 99%